On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2004
• ISSN: 1560-8034
• Main Authors: Zhirko, Yu.I., Zharkov, I.P., Kovalyuk, Z.D., Pyrlja, M.M., Boledzyuk, V.B.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119208
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals / Yu.I. Zhirko, I.P. Zharkov, Z.D. Kovalyuk, M.M. Pyrlja, V.B. Boledzyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 404-410. — Бібліогр.: 22 назв. — англ.

Exciton absorption spectra of layered InSe and GaSe crystals electrochemically intercalated by hydrogen were investigated. It was found that the observed at T = 80 K non-monotonic shift of the exciton absorption peak n = 1 with growing hydrogen concentration x (here x is the amount of hydrogen atoms...