The change in optical characteristics of ZnO crystals under ruby laser irradiation
The influence of pulsed ruby laser irradiation on luminescence and optical transmission spectra of nominally undoped ZnO single crystals was investigated. Both treatment and measurements were performed at 300 K. The irradiation was found to cause the increase of crystal transmission in absorption ed...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2004 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119213 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The change in optical characteristics of ZnO crystals under ruby laser irradiation / I.V. Markevich, V.I. Kushnirenko, A. Baidullaeva, B.M. Bulakh, P.V. Pobirovskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 350-354. — Бібліогр.: 25 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862681445298864128 |
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| author | Markevich, I.V. Kushnirenko, V.I. Baidullaeva, A. Bulakh, B.M. Pobirovskiy, P.V. |
| author_facet | Markevich, I.V. Kushnirenko, V.I. Baidullaeva, A. Bulakh, B.M. Pobirovskiy, P.V. |
| citation_txt | The change in optical characteristics of ZnO crystals under ruby laser irradiation / I.V. Markevich, V.I. Kushnirenko, A. Baidullaeva, B.M. Bulakh, P.V. Pobirovskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 350-354. — Бібліогр.: 25 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The influence of pulsed ruby laser irradiation on luminescence and optical transmission spectra of nominally undoped ZnO single crystals was investigated. Both treatment and measurements were performed at 300 K. The irradiation was found to cause the increase of crystal transmission in absorption edge region and the rise of shortwave wing of exciton luminescence with respect to its longwave one. These changes were accompanied with the rise of electric conductivity. The analysis of obtained results in common with earlier data led to the conclusion that the movement of mobile shallow donors from dislocations to crystal bulk took place under the influence of ultrasound wave excited by laser pulse. The decrease of shallow donor density near dislocations resulted in the shrinkage of c-band state density “tail” in these regions, which caused the shift of the optical absorption edge to the shortwave side.
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| first_indexed | 2025-12-07T15:50:17Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-119213 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:50:17Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Markevich, I.V. Kushnirenko, V.I. Baidullaeva, A. Bulakh, B.M. Pobirovskiy, P.V. 2017-06-05T09:29:09Z 2017-06-05T09:29:09Z 2004 The change in optical characteristics of ZnO crystals under ruby laser irradiation / I.V. Markevich, V.I. Kushnirenko, A. Baidullaeva, B.M. Bulakh, P.V. Pobirovskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 350-354. — Бібліогр.: 25 назв. — англ. 1560-8034 PACS: 61.72.Ji, 61.72.Lk, 61.72.Yx, 61.80.Ba, 78.40.Fy, 78.55.Et https://nasplib.isofts.kiev.ua/handle/123456789/119213 The influence of pulsed ruby laser irradiation on luminescence and optical transmission spectra of nominally undoped ZnO single crystals was investigated. Both treatment and measurements were performed at 300 K. The irradiation was found to cause the increase of crystal transmission in absorption edge region and the rise of shortwave wing of exciton luminescence with respect to its longwave one. These changes were accompanied with the rise of electric conductivity. The analysis of obtained results in common with earlier data led to the conclusion that the movement of mobile shallow donors from dislocations to crystal bulk took place under the influence of ultrasound wave excited by laser pulse. The decrease of shallow donor density near dislocations resulted in the shrinkage of c-band state density “tail” in these regions, which caused the shift of the optical absorption edge to the shortwave side. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The change in optical characteristics of ZnO crystals under ruby laser irradiation Article published earlier |
| spellingShingle | The change in optical characteristics of ZnO crystals under ruby laser irradiation Markevich, I.V. Kushnirenko, V.I. Baidullaeva, A. Bulakh, B.M. Pobirovskiy, P.V. |
| title | The change in optical characteristics of ZnO crystals under ruby laser irradiation |
| title_full | The change in optical characteristics of ZnO crystals under ruby laser irradiation |
| title_fullStr | The change in optical characteristics of ZnO crystals under ruby laser irradiation |
| title_full_unstemmed | The change in optical characteristics of ZnO crystals under ruby laser irradiation |
| title_short | The change in optical characteristics of ZnO crystals under ruby laser irradiation |
| title_sort | change in optical characteristics of zno crystals under ruby laser irradiation |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119213 |
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