Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates
Modular bandpass spectral filter for germanium and silicon substrates in 8 – 14 μm band applications have been proposed. The design approach, similar to antireflection coating design has been adopted to make the model simple with lesser number of layers. The full width half maximum (FWHM) value of t...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2004 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119214 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates / M.H. Asghar, M.B. Khan, S. Naseem // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 355-359. — Бібліогр.: 19 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-119214 |
|---|---|
| record_format |
dspace |
| spelling |
Asghar, M.H. Khan, M.B. Naseem, S. 2017-06-05T09:31:24Z 2017-06-05T09:31:24Z 2004 Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates / M.H. Asghar, M.B. Khan, S. Naseem // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 355-359. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS: 42.79Wc, 78.20e https://nasplib.isofts.kiev.ua/handle/123456789/119214 Modular bandpass spectral filter for germanium and silicon substrates in 8 – 14 μm band applications have been proposed. The design approach, similar to antireflection coating design has been adopted to make the model simple with lesser number of layers. The full width half maximum (FWHM) value of the filter for the two substrates is varied by varying the refractive index of a single layer in the multilayer stack. The design is also analyzed for zero and 45 degree angles of incidence. The analysis has shown that the designed configuration exhibits identical behavior for these two substrates. The proposed configuration could be used for different optical and optoelectronic applications. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates |
| spellingShingle |
Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates Asghar, M.H. Khan, M.B. Naseem, S. |
| title_short |
Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates |
| title_full |
Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates |
| title_fullStr |
Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates |
| title_full_unstemmed |
Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates |
| title_sort |
designing bandpass filters in 8 – 14 μm range for si and ge substrates |
| author |
Asghar, M.H. Khan, M.B. Naseem, S. |
| author_facet |
Asghar, M.H. Khan, M.B. Naseem, S. |
| publishDate |
2004 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Modular bandpass spectral filter for germanium and silicon substrates in 8 – 14 μm band applications have been proposed. The design approach, similar to antireflection coating design has been adopted to make the model simple with lesser number of layers. The full width half maximum (FWHM) value of the filter for the two substrates is varied by varying the refractive index of a single layer in the multilayer stack. The design is also analyzed for zero and 45 degree angles of incidence. The analysis has shown that the designed configuration exhibits identical behavior for these two substrates. The proposed configuration could be used for different optical and optoelectronic applications.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119214 |
| citation_txt |
Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates / M.H. Asghar, M.B. Khan, S. Naseem // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 355-359. — Бібліогр.: 19 назв. — англ. |
| work_keys_str_mv |
AT asgharmh designingbandpassfiltersin814μmrangeforsiandgesubstrates AT khanmb designingbandpassfiltersin814μmrangeforsiandgesubstrates AT naseems designingbandpassfiltersin814μmrangeforsiandgesubstrates |
| first_indexed |
2025-11-30T11:33:26Z |
| last_indexed |
2025-11-30T11:33:26Z |
| _version_ |
1850857514486202368 |