Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2004
• Hauptverfasser: Kovalyuk, Z.D., Sydor, O.M., Netyaga, V.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119215
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact / Z.D. Kovalyuk, O.M. Sydor, V.V. Netyaga // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 360-362. — Бібліогр.: 10 назв. — англ.

Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is formed. To understand processes occurring in such heterojunctions, the measurements of current-voltage characteristics in forward and reverse directions, photoelectric modification of the direct branch of the current-voltage characteristic, capacitance-voltage characteristic, spectrum of the relative quantum efficiency have been carried out at the room temperature. The structures had a well-pronounced photovoltaic effect – the open-circuit voltage was 0.5 V and the short-circuit current density – 0.7 mА/cm². The conclusion about possibility of application of the obtained heterojunctions as photodetectors is made.