Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact
Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is formed. To understand processes occurring in such heterojunctions, the measurem...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2004 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119215 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact / Z.D. Kovalyuk, O.M. Sydor, V.V. Netyaga // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 360-362. — Бібліогр.: 10 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862700958018961408 |
|---|---|
| author | Kovalyuk, Z.D. Sydor, O.M. Netyaga, V.V. |
| author_facet | Kovalyuk, Z.D. Sydor, O.M. Netyaga, V.V. |
| citation_txt | Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact / Z.D. Kovalyuk, O.M. Sydor, V.V. Netyaga // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 360-362. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is formed. To understand processes occurring in such heterojunctions, the measurements of current-voltage characteristics in forward and reverse directions, photoelectric modification of the direct branch of the current-voltage characteristic, capacitance-voltage characteristic, spectrum of the relative quantum efficiency have been carried out at the room temperature. The structures had a well-pronounced photovoltaic effect – the open-circuit voltage was 0.5 V and the short-circuit current density – 0.7 mА/cm². The conclusion about possibility of application of the obtained heterojunctions as photodetectors is made.
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| first_indexed | 2025-12-07T16:40:15Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119215 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:40:15Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kovalyuk, Z.D. Sydor, O.M. Netyaga, V.V. 2017-06-05T09:35:45Z 2017-06-05T09:35:45Z 2004 Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact / Z.D. Kovalyuk, O.M. Sydor, V.V. Netyaga // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 360-362. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS: 73.40.Lq https://nasplib.isofts.kiev.ua/handle/123456789/119215 Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is formed. To understand processes occurring in such heterojunctions, the measurements of current-voltage characteristics in forward and reverse directions, photoelectric modification of the direct branch of the current-voltage characteristic, capacitance-voltage characteristic, spectrum of the relative quantum efficiency have been carried out at the room temperature. The structures had a well-pronounced photovoltaic effect – the open-circuit voltage was 0.5 V and the short-circuit current density – 0.7 mА/cm². The conclusion about possibility of application of the obtained heterojunctions as photodetectors is made. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact Article published earlier |
| spellingShingle | Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact Kovalyuk, Z.D. Sydor, O.M. Netyaga, V.V. |
| title | Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact |
| title_full | Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact |
| title_fullStr | Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact |
| title_full_unstemmed | Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact |
| title_short | Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact |
| title_sort | electrical and photoelectrical properties of n-inse/p-cuinse₂ optical contact |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119215 |
| work_keys_str_mv | AT kovalyukzd electricalandphotoelectricalpropertiesofninsepcuinse2opticalcontact AT sydorom electricalandphotoelectricalpropertiesofninsepcuinse2opticalcontact AT netyagavv electricalandphotoelectricalpropertiesofninsepcuinse2opticalcontact |