Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy
Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and it was shown that sizes of experimentally obtained QDs are in good accordance...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2004 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119216 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy / I.E. Maronchuk, A.M. D’yachenko, A.I. Minailov, V.V. Kurak, I.V. Chorny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 363-367. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862659621579128832 |
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| author | Maronchuk, I.E. D’yachenko, A.M. Minailov, A.I. Kurak, V.V. Chorny, I.V. |
| author_facet | Maronchuk, I.E. D’yachenko, A.M. Minailov, A.I. Kurak, V.V. Chorny, I.V. |
| citation_txt | Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy / I.E. Maronchuk, A.M. D’yachenko, A.I. Minailov, V.V. Kurak, I.V. Chorny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 363-367. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and it was shown that sizes of experimentally obtained QDs are in good accordance with those theoretically calculated taking into account the Rehbinder effect and the process of nuclei increase. The STM-image and the photoluminescence spectra of the structures with InAs QD grown on GaAs substrate and also InSb quantum dots grown on GaSb substrate are represented.
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| first_indexed | 2025-12-02T09:46:03Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119216 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-02T09:46:03Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Maronchuk, I.E. D’yachenko, A.M. Minailov, A.I. Kurak, V.V. Chorny, I.V. 2017-06-05T09:36:38Z 2017-06-05T09:36:38Z 2004 Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy / I.E. Maronchuk, A.M. D’yachenko, A.I. Minailov, V.V. Kurak, I.V. Chorny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 363-367. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 73.40.Lq https://nasplib.isofts.kiev.ua/handle/123456789/119216 Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and it was shown that sizes of experimentally obtained QDs are in good accordance with those theoretically calculated taking into account the Rehbinder effect and the process of nuclei increase. The STM-image and the photoluminescence spectra of the structures with InAs QD grown on GaAs substrate and also InSb quantum dots grown on GaSb substrate are represented. The researches described in this publication were possible partly by Grant Award # UE2-2225 of the U.S. Civilian Research and Development Foundation for the Independent States of the Former Soviet Union (CRDF). The authors also thank Yu. Jegerya for valuable contribution to obtaining the STM-images of QDs. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy Article published earlier |
| spellingShingle | Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy Maronchuk, I.E. D’yachenko, A.M. Minailov, A.I. Kurak, V.V. Chorny, I.V. |
| title | Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy |
| title_full | Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy |
| title_fullStr | Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy |
| title_full_unstemmed | Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy |
| title_short | Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy |
| title_sort | obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119216 |
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