Active layer – semi-insulating substrate interface effect on GaAs MESFET components

This paper describes the polarization effect of the substrate on the electric characteristics of the GaAs Metal Semiconductor Field Effect Transistor (GaAs MESFET). An analysis based on the existence of a double space charge at the interface active layer – semi-insulating substrate is applied to det...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2004
Hauptverfasser: Belgat, M., Merabtine, N., Zaabat, M., Kenzai, C., Saidi, Y.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119217
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Active layer – semi-insulating substrate interface effect on GaAs MESFET components / M. Belgat, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 368-371. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Zusammenfassung:This paper describes the polarization effect of the substrate on the electric characteristics of the GaAs Metal Semiconductor Field Effect Transistor (GaAs MESFET). An analysis based on the existence of a double space charge at the interface active layer – semi-insulating substrate is applied to determine the active layer and interface parameters. The properties of the drain current and the output admittance characteristics as well as the physical phenomena inherent to this interface are assigned to the dynamic response of the double space charge region.
ISSN:1560-8034