Active layer – semi-insulating substrate interface effect on GaAs MESFET components
This paper describes the polarization effect of the substrate on the electric characteristics of the GaAs Metal Semiconductor Field Effect Transistor (GaAs MESFET). An analysis based on the existence of a double space charge at the interface active layer – semi-insulating substrate is applied to det...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2004 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119217 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Active layer – semi-insulating substrate interface effect on GaAs MESFET components / M. Belgat, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 368-371. — Бібліогр.: 6 назв. — англ. |
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Belgat, M. Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. 2017-06-05T09:37:22Z 2017-06-05T09:37:22Z 2004 Active layer – semi-insulating substrate interface effect on GaAs MESFET components / M. Belgat, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 368-371. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 68.35.-p, 68.35.Ct https://nasplib.isofts.kiev.ua/handle/123456789/119217 This paper describes the polarization effect of the substrate on the electric characteristics of the GaAs Metal Semiconductor Field Effect Transistor (GaAs MESFET). An analysis based on the existence of a double space charge at the interface active layer – semi-insulating substrate is applied to determine the active layer and interface parameters. The properties of the drain current and the output admittance characteristics as well as the physical phenomena inherent to this interface are assigned to the dynamic response of the double space charge region. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Active layer – semi-insulating substrate interface effect on GaAs MESFET components Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Active layer – semi-insulating substrate interface effect on GaAs MESFET components |
| spellingShingle |
Active layer – semi-insulating substrate interface effect on GaAs MESFET components Belgat, M. Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. |
| title_short |
Active layer – semi-insulating substrate interface effect on GaAs MESFET components |
| title_full |
Active layer – semi-insulating substrate interface effect on GaAs MESFET components |
| title_fullStr |
Active layer – semi-insulating substrate interface effect on GaAs MESFET components |
| title_full_unstemmed |
Active layer – semi-insulating substrate interface effect on GaAs MESFET components |
| title_sort |
active layer – semi-insulating substrate interface effect on gaas mesfet components |
| author |
Belgat, M. Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. |
| author_facet |
Belgat, M. Merabtine, N. Zaabat, M. Kenzai, C. Saidi, Y. |
| publishDate |
2004 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
This paper describes the polarization effect of the substrate on the electric characteristics of the GaAs Metal Semiconductor Field Effect Transistor (GaAs MESFET). An analysis based on the existence of a double space charge at the interface active layer – semi-insulating substrate is applied to determine the active layer and interface parameters. The properties of the drain current and the output admittance characteristics as well as the physical phenomena inherent to this interface are assigned to the dynamic response of the double space charge region.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119217 |
| citation_txt |
Active layer – semi-insulating substrate interface effect on GaAs MESFET components / M. Belgat, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 368-371. — Бібліогр.: 6 назв. — англ. |
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2025-12-07T16:21:46Z |
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2025-12-07T16:21:46Z |
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