Active layer – semi-insulating substrate interface effect on GaAs MESFET components

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2004
• Main Authors: Belgat, M., Merabtine, N., Zaabat, M., Kenzai, C., Saidi, Y.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119217
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Active layer – semi-insulating substrate interface effect on GaAs MESFET components / M. Belgat, N. Merabtine, M. Zaabat, C. Kenzai, Y. Saidi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 368-371. — Бібліогр.: 6 назв. — англ.

This paper describes the polarization effect of the substrate on the electric characteristics of the GaAs Metal Semiconductor Field Effect Transistor (GaAs MESFET). An analysis based on the existence of a double space charge at the interface active layer – semi-insulating substrate is applied to det...