Optical and acoustical phonon modes in superlattices with SiGe QDs

Multilayers with SiGe nanoislands grown in a broad temperature range (300-600 °C) are studied using Raman spectroscopy, HRXRD and AFM. It is shown that the islands are fully strained when obtained at 300 °C and gradually relax with the growth temperature increase. The main contribution to the Raman...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2004
Автори: Yukhymchuk, V.O., Dzhagan, V.M., Klad’ko, V.P., Lytvyn, O.S., Machulin, V.F., Valakh, M.Ya., Yaremko, A.M., Milekhin, A.G., Krasil’nik, Z.F., Novikov, A.V., Mestres, N., Pascual, J.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/119224
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Optical and acoustical phonon modes in superlattices with SiGe QDs / V.O. Yukhymchuk, V.M. Dzhagan, V.P. Klad’ko, O.S. Lytvyn, V.F. Machulin, M.Ya. Valakh, A.M. Yaremko, A.G. Milekhin, Z.F. Krasil’nik, A.V. Novikov, N. Mestres, J. Pascual // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 456-461. — Бібліогр.: 20 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Yukhymchuk, V.O.
Dzhagan, V.M.
Klad’ko, V.P.
Lytvyn, O.S.
Machulin, V.F.
Valakh, M.Ya.
Yaremko, A.M.
Milekhin, A.G.
Krasil’nik, Z.F.
Novikov, A.V.
Mestres, N.
Pascual, J.
author_facet Yukhymchuk, V.O.
Dzhagan, V.M.
Klad’ko, V.P.
Lytvyn, O.S.
Machulin, V.F.
Valakh, M.Ya.
Yaremko, A.M.
Milekhin, A.G.
Krasil’nik, Z.F.
Novikov, A.V.
Mestres, N.
Pascual, J.
citation_txt Optical and acoustical phonon modes in superlattices with SiGe QDs / V.O. Yukhymchuk, V.M. Dzhagan, V.P. Klad’ko, O.S. Lytvyn, V.F. Machulin, M.Ya. Valakh, A.M. Yaremko, A.G. Milekhin, Z.F. Krasil’nik, A.V. Novikov, N. Mestres, J. Pascual // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 456-461. — Бібліогр.: 20 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Multilayers with SiGe nanoislands grown in a broad temperature range (300-600 °C) are studied using Raman spectroscopy, HRXRD and AFM. It is shown that the islands are fully strained when obtained at 300 °C and gradually relax with the growth temperature increase. The main contribution to the Raman peaks caused by scattering on folded acoustic phonons in multilayers (n ≤ 10) with nanoislands is due to the islands themselves. The enhancement of the scattering intensity due to resonance of the exciting light with the electronic transitions inside the islands is shown to play a significant role.
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language English
last_indexed 2025-12-07T20:26:31Z
publishDate 2004
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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spelling Yukhymchuk, V.O.
Dzhagan, V.M.
Klad’ko, V.P.
Lytvyn, O.S.
Machulin, V.F.
Valakh, M.Ya.
Yaremko, A.M.
Milekhin, A.G.
Krasil’nik, Z.F.
Novikov, A.V.
Mestres, N.
Pascual, J.
2017-06-05T14:23:05Z
2017-06-05T14:23:05Z
2004
Optical and acoustical phonon modes in superlattices with SiGe QDs / V.O. Yukhymchuk, V.M. Dzhagan, V.P. Klad’ko, O.S. Lytvyn, V.F. Machulin, M.Ya. Valakh, A.M. Yaremko, A.G. Milekhin, Z.F. Krasil’nik, A.V. Novikov, N. Mestres, J. Pascual // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 456-461. — Бібліогр.: 20 назв. — англ.
1560-8034
PACS: 63.22.+m, 68.37.Ps, 68.65.Hb, 72.10.Di
https://nasplib.isofts.kiev.ua/handle/123456789/119224
Multilayers with SiGe nanoislands grown in a broad temperature range (300-600 °C) are studied using Raman spectroscopy, HRXRD and AFM. It is shown that the islands are fully strained when obtained at 300 °C and gradually relax with the growth temperature increase. The main contribution to the Raman peaks caused by scattering on folded acoustic phonons in multilayers (n ≤ 10) with nanoislands is due to the islands themselves. The enhancement of the scattering intensity due to resonance of the exciting light with the electronic transitions inside the islands is shown to play a significant role.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Optical and acoustical phonon modes in superlattices with SiGe QDs
Article
published earlier
spellingShingle Optical and acoustical phonon modes in superlattices with SiGe QDs
Yukhymchuk, V.O.
Dzhagan, V.M.
Klad’ko, V.P.
Lytvyn, O.S.
Machulin, V.F.
Valakh, M.Ya.
Yaremko, A.M.
Milekhin, A.G.
Krasil’nik, Z.F.
Novikov, A.V.
Mestres, N.
Pascual, J.
title Optical and acoustical phonon modes in superlattices with SiGe QDs
title_full Optical and acoustical phonon modes in superlattices with SiGe QDs
title_fullStr Optical and acoustical phonon modes in superlattices with SiGe QDs
title_full_unstemmed Optical and acoustical phonon modes in superlattices with SiGe QDs
title_short Optical and acoustical phonon modes in superlattices with SiGe QDs
title_sort optical and acoustical phonon modes in superlattices with sige qds
url https://nasplib.isofts.kiev.ua/handle/123456789/119224
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