Photoelectrical characteristics of two-dimensional macroporous silicon structures
Photoelectrical properties of macroporous silicon structures were investigated in the near infrared spectral range (1 to 8 μm). Angular dependences of photoconductivity, its amplification, realization of the single-mode optical regime, essential domination of the absorption over the light reflection...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2004 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119227 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Photoelectrical characteristics of two-dimensional macroporous silicon structures / L.A. Karachevtseva, V.F. Onischenko, M.I. Karas’, O.I. Dandur’yants, F.F. Sizov, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 425-429. — Бібліогр.: 8 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862603393354170368 |
|---|---|
| author | Karachevtseva, L.A. Onischenko, V.F. Karas, M.I. Dandur’yants, O.I. Sizov, F.F. Stronska, O.J. |
| author_facet | Karachevtseva, L.A. Onischenko, V.F. Karas, M.I. Dandur’yants, O.I. Sizov, F.F. Stronska, O.J. |
| citation_txt | Photoelectrical characteristics of two-dimensional macroporous silicon structures / L.A. Karachevtseva, V.F. Onischenko, M.I. Karas’, O.I. Dandur’yants, F.F. Sizov, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 425-429. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Photoelectrical properties of macroporous silicon structures were investigated in the near infrared spectral range (1 to 8 μm). Angular dependences of photoconductivity, its amplification, realization of the single-mode optical regime, essential domination of the absorption over the light reflection by structures of macroporous silicon are explained by formation of the plasmon type surface polaritons. Photoconductivity bands correlate with maxima of intrinsic and impurity light absorption. The change in the photoconductivity value is mainly determined by the growth of the electron mobility.
|
| first_indexed | 2025-11-28T05:11:00Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119227 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-28T05:11:00Z |
| publishDate | 2004 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Karachevtseva, L.A. Onischenko, V.F. Karas, M.I. Dandur’yants, O.I. Sizov, F.F. Stronska, O.J. 2017-06-05T14:28:25Z 2017-06-05T14:28:25Z 2004 Photoelectrical characteristics of two-dimensional macroporous silicon structures / L.A. Karachevtseva, V.F. Onischenko, M.I. Karas’, O.I. Dandur’yants, F.F. Sizov, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 425-429. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 71.25.Rk, 81.60Cp https://nasplib.isofts.kiev.ua/handle/123456789/119227 Photoelectrical properties of macroporous silicon structures were investigated in the near infrared spectral range (1 to 8 μm). Angular dependences of photoconductivity, its amplification, realization of the single-mode optical regime, essential domination of the absorption over the light reflection by structures of macroporous silicon are explained by formation of the plasmon type surface polaritons. Photoconductivity bands correlate with maxima of intrinsic and impurity light absorption. The change in the photoconductivity value is mainly determined by the growth of the electron mobility. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photoelectrical characteristics of two-dimensional macroporous silicon structures Article published earlier |
| spellingShingle | Photoelectrical characteristics of two-dimensional macroporous silicon structures Karachevtseva, L.A. Onischenko, V.F. Karas, M.I. Dandur’yants, O.I. Sizov, F.F. Stronska, O.J. |
| title | Photoelectrical characteristics of two-dimensional macroporous silicon structures |
| title_full | Photoelectrical characteristics of two-dimensional macroporous silicon structures |
| title_fullStr | Photoelectrical characteristics of two-dimensional macroporous silicon structures |
| title_full_unstemmed | Photoelectrical characteristics of two-dimensional macroporous silicon structures |
| title_short | Photoelectrical characteristics of two-dimensional macroporous silicon structures |
| title_sort | photoelectrical characteristics of two-dimensional macroporous silicon structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119227 |
| work_keys_str_mv | AT karachevtsevala photoelectricalcharacteristicsoftwodimensionalmacroporoussiliconstructures AT onischenkovf photoelectricalcharacteristicsoftwodimensionalmacroporoussiliconstructures AT karasmi photoelectricalcharacteristicsoftwodimensionalmacroporoussiliconstructures AT danduryantsoi photoelectricalcharacteristicsoftwodimensionalmacroporoussiliconstructures AT sizovff photoelectricalcharacteristicsoftwodimensionalmacroporoussiliconstructures AT stronskaoj photoelectricalcharacteristicsoftwodimensionalmacroporoussiliconstructures |