Photoelectrical characteristics of two-dimensional macroporous silicon structures
Photoelectrical properties of macroporous silicon structures were investigated in the near infrared spectral range (1 to 8 μm). Angular dependences of photoconductivity, its amplification, realization of the single-mode optical regime, essential domination of the absorption over the light reflection...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2004 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119227 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoelectrical characteristics of two-dimensional macroporous silicon structures / L.A. Karachevtseva, V.F. Onischenko, M.I. Karas’, O.I. Dandur’yants, F.F. Sizov, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 425-429. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-119227 |
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Karachevtseva, L.A. Onischenko, V.F. Karas, M.I. Dandur’yants, O.I. Sizov, F.F. Stronska, O.J. 2017-06-05T14:28:25Z 2017-06-05T14:28:25Z 2004 Photoelectrical characteristics of two-dimensional macroporous silicon structures / L.A. Karachevtseva, V.F. Onischenko, M.I. Karas’, O.I. Dandur’yants, F.F. Sizov, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 425-429. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 71.25.Rk, 81.60Cp https://nasplib.isofts.kiev.ua/handle/123456789/119227 Photoelectrical properties of macroporous silicon structures were investigated in the near infrared spectral range (1 to 8 μm). Angular dependences of photoconductivity, its amplification, realization of the single-mode optical regime, essential domination of the absorption over the light reflection by structures of macroporous silicon are explained by formation of the plasmon type surface polaritons. Photoconductivity bands correlate with maxima of intrinsic and impurity light absorption. The change in the photoconductivity value is mainly determined by the growth of the electron mobility. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photoelectrical characteristics of two-dimensional macroporous silicon structures Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Photoelectrical characteristics of two-dimensional macroporous silicon structures |
| spellingShingle |
Photoelectrical characteristics of two-dimensional macroporous silicon structures Karachevtseva, L.A. Onischenko, V.F. Karas, M.I. Dandur’yants, O.I. Sizov, F.F. Stronska, O.J. |
| title_short |
Photoelectrical characteristics of two-dimensional macroporous silicon structures |
| title_full |
Photoelectrical characteristics of two-dimensional macroporous silicon structures |
| title_fullStr |
Photoelectrical characteristics of two-dimensional macroporous silicon structures |
| title_full_unstemmed |
Photoelectrical characteristics of two-dimensional macroporous silicon structures |
| title_sort |
photoelectrical characteristics of two-dimensional macroporous silicon structures |
| author |
Karachevtseva, L.A. Onischenko, V.F. Karas, M.I. Dandur’yants, O.I. Sizov, F.F. Stronska, O.J. |
| author_facet |
Karachevtseva, L.A. Onischenko, V.F. Karas, M.I. Dandur’yants, O.I. Sizov, F.F. Stronska, O.J. |
| publishDate |
2004 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Photoelectrical properties of macroporous silicon structures were investigated in the near infrared spectral range (1 to 8 μm). Angular dependences of photoconductivity, its amplification, realization of the single-mode optical regime, essential domination of the absorption over the light reflection by structures of macroporous silicon are explained by formation of the plasmon type surface polaritons. Photoconductivity bands correlate with maxima of intrinsic and impurity light absorption. The change in the photoconductivity value is mainly determined by the growth of the electron mobility.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119227 |
| citation_txt |
Photoelectrical characteristics of two-dimensional macroporous silicon structures / L.A. Karachevtseva, V.F. Onischenko, M.I. Karas’, O.I. Dandur’yants, F.F. Sizov, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 425-429. — Бібліогр.: 8 назв. — англ. |
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2025-11-28T05:11:00Z |
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