Spectra of the photo-electric phenomena physically differentiated on the light absorption factor

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2004
• Hauptverfasser: Berezhinsky, L.I., Venger, E.F., Matyash, I.E., Serdega, B.K.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119230
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Spectra of the photo-electric phenomena physically differentiated on the light absorption factor / L.I. Berezhinsky, E.F. Venger, I.E. Matyash, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 441-445. — Бібліогр.: 5 назв. — англ.

The pleochroism phenomena in photoconductivity of Ge samples and gate photoelectomotive force (photo-emf) of Si samples were experimentally investigated by a polarization modulation method. Anisotropy of dielectric properties was created by uniaxial compression. The spectral characteristics of the p...