Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors
Evolution of the physical insight into the nature of main factors that influence the energy band structure formation in semiconductors, and, hence, their basic electrophysical, optical, thermoelectrical and even mechanical properties, is reviewed.
 These factors are:
 - dopant and re...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2001 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119232 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors / P.I. Baranskii, V.M. Babich, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 1-4. — Бібліогр.: 21 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862662129878827008 |
|---|---|
| author | Baranskii, P.I. Babich, V.M. Venger, E.F. |
| author_facet | Baranskii, P.I. Babich, V.M. Venger, E.F. |
| citation_txt | Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors / P.I. Baranskii, V.M. Babich, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 1-4. — Бібліогр.: 21 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Evolution of the physical insight into the nature of main factors that influence the energy band structure formation in semiconductors, and, hence, their basic electrophysical, optical, thermoelectrical and even mechanical properties, is reviewed.
These factors are:
- dopant and residual impurities, intrinsic point defects, elongated defects (of the dislocation type),
- electrically active thermal donors and other complexes that are formed due to direct impurity-impurity or impurity-defect interaction.
Keywords: electron transport, point defect complex, impurity-impurity interaction, impurity-defect interaction.
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| first_indexed | 2025-12-02T13:41:08Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119232 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-02T13:41:08Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Baranskii, P.I. Babich, V.M. Venger, E.F. 2017-06-05T14:41:29Z 2017-06-05T14:41:29Z 2001 Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors / P.I. Baranskii, V.M. Babich, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 1-4. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS: 61.72.T, 71.55, 72.80.P https://nasplib.isofts.kiev.ua/handle/123456789/119232 Evolution of the physical insight into the nature of main factors that influence the energy band structure formation in semiconductors, and, hence, their basic electrophysical, optical, thermoelectrical and even mechanical properties, is reviewed.
 These factors are:
 - dopant and residual impurities, intrinsic point defects, elongated defects (of the dislocation type),
 - electrically active thermal donors and other complexes that are formed due to direct impurity-impurity or impurity-defect interaction.
 Keywords: electron transport, point defect complex, impurity-impurity interaction, impurity-defect interaction. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors Article published earlier |
| spellingShingle | Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors Baranskii, P.I. Babich, V.M. Venger, E.F. |
| title | Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors |
| title_full | Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors |
| title_fullStr | Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors |
| title_full_unstemmed | Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors |
| title_short | Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors |
| title_sort | development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119232 |
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