Crystallochemistry of defects in lead telluride films
The crystallochemical model of vapor-phase epitaxy of the lead telluride films has been proposed with the supposition about the simultaneous formation of singly charged, doubly charged and electroneutral Frenkel defects in the cationic sublattice. It has been shown that in spite of the large concent...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2001 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119233 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Crystallochemistry of defects in lead telluride films / D.M. Freik, M.A. Ruvinskii, B.M. Ruvinskii, M.A. Galushchak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 5-8. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862610951756316672 |
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| author | Freik, D.M. Ruvinskii, M.A. Ruvinskii, B.M. Galushchak, M.A. |
| author_facet | Freik, D.M. Ruvinskii, M.A. Ruvinskii, B.M. Galushchak, M.A. |
| citation_txt | Crystallochemistry of defects in lead telluride films / D.M. Freik, M.A. Ruvinskii, B.M. Ruvinskii, M.A. Galushchak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 5-8. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The crystallochemical model of vapor-phase epitaxy of the lead telluride films has been proposed with the supposition about the simultaneous formation of singly charged, doubly charged and electroneutral Frenkel defects in the cationic sublattice. It has been shown that in spite of the large concentration of partly compensated doubly charged defects the singly charged Frenkel pairs Pbi⁺ and VPb⁻ also play an essential role in change carrier concentration in PbTe films. The results of numerical calculation agree with the available experimental data of the dependence of charge carrier's concentration in films upon the partial pressure of tellurium vapor and the deposition's temperature in the hot-wall method.
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| first_indexed | 2025-11-29T00:07:00Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119233 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-29T00:07:00Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Freik, D.M. Ruvinskii, M.A. Ruvinskii, B.M. Galushchak, M.A. 2017-06-05T14:46:59Z 2017-06-05T14:46:59Z 2001 Crystallochemistry of defects in lead telluride films / D.M. Freik, M.A. Ruvinskii, B.M. Ruvinskii, M.A. Galushchak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 5-8. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 72.20.M, 73.40 https://nasplib.isofts.kiev.ua/handle/123456789/119233 The crystallochemical model of vapor-phase epitaxy of the lead telluride films has been proposed with the supposition about the simultaneous formation of singly charged, doubly charged and electroneutral Frenkel defects in the cationic sublattice. It has been shown that in spite of the large concentration of partly compensated doubly charged defects the singly charged Frenkel pairs Pbi⁺ and VPb⁻ also play an essential role in change carrier concentration in PbTe films. The results of numerical calculation agree with the available experimental data of the dependence of charge carrier's concentration in films upon the partial pressure of tellurium vapor and the deposition's temperature in the hot-wall method. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Crystallochemistry of defects in lead telluride films Article published earlier |
| spellingShingle | Crystallochemistry of defects in lead telluride films Freik, D.M. Ruvinskii, M.A. Ruvinskii, B.M. Galushchak, M.A. |
| title | Crystallochemistry of defects in lead telluride films |
| title_full | Crystallochemistry of defects in lead telluride films |
| title_fullStr | Crystallochemistry of defects in lead telluride films |
| title_full_unstemmed | Crystallochemistry of defects in lead telluride films |
| title_short | Crystallochemistry of defects in lead telluride films |
| title_sort | crystallochemistry of defects in lead telluride films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119233 |
| work_keys_str_mv | AT freikdm crystallochemistryofdefectsinleadtelluridefilms AT ruvinskiima crystallochemistryofdefectsinleadtelluridefilms AT ruvinskiibm crystallochemistryofdefectsinleadtelluridefilms AT galushchakma crystallochemistryofdefectsinleadtelluridefilms |