Crystallochemistry of defects in lead telluride films

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2001
• Hauptverfasser: Freik, D.M., Ruvinskii, M.A., Ruvinskii, B.M., Galushchak, M.A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119233
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Crystallochemistry of defects in lead telluride films / D.M. Freik, M.A. Ruvinskii, B.M. Ruvinskii, M.A. Galushchak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 5-8. — Бібліогр.: 13 назв. — англ.

The crystallochemical model of vapor-phase epitaxy of the lead telluride films has been proposed with the supposition about the simultaneous formation of singly charged, doubly charged and electroneutral Frenkel defects in the cationic sublattice. It has been shown that in spite of the large concent...