Effect of surface condition on strain in semiconductor crystal sample
Using the optical-polarization technique with polarization modulation, we measured stresses due to surface tension in a single-crystalline silicon sample. Optical anisotropy distribution along the normal to the sample surface was studied at different state conditions, depending on its treatment. It...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2001 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119234 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of surface condition on strain in semiconductor crystal sample / B.K. Serdega, E.V. Nikitenko, V.I. Prikhodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 9-11. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Serdega, B.K. Nikitenko, E.V. Prikhodenko, V.I. 2017-06-05T14:47:58Z 2017-06-05T14:47:58Z 2001 Effect of surface condition on strain in semiconductor crystal sample / B.K. Serdega, E.V. Nikitenko, V.I. Prikhodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 9-11. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 78.20.C https://nasplib.isofts.kiev.ua/handle/123456789/119234 Using the optical-polarization technique with polarization modulation, we measured stresses due to surface tension in a single-crystalline silicon sample. Optical anisotropy distribution along the normal to the sample surface was studied at different state conditions, depending on its treatment. It was found that presence of a surface layer in the crystal, with physical properties differing from those in the bulk, gave rise to extended distribution of stresses in the uniform part of the crystal. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of surface condition on strain in semiconductor crystal sample Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| title |
Effect of surface condition on strain in semiconductor crystal sample |
| spellingShingle |
Effect of surface condition on strain in semiconductor crystal sample Serdega, B.K. Nikitenko, E.V. Prikhodenko, V.I. |
| title_short |
Effect of surface condition on strain in semiconductor crystal sample |
| title_full |
Effect of surface condition on strain in semiconductor crystal sample |
| title_fullStr |
Effect of surface condition on strain in semiconductor crystal sample |
| title_full_unstemmed |
Effect of surface condition on strain in semiconductor crystal sample |
| title_sort |
effect of surface condition on strain in semiconductor crystal sample |
| author |
Serdega, B.K. Nikitenko, E.V. Prikhodenko, V.I. |
| author_facet |
Serdega, B.K. Nikitenko, E.V. Prikhodenko, V.I. |
| publishDate |
2001 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Using the optical-polarization technique with polarization modulation, we measured stresses due to surface tension in a single-crystalline silicon sample. Optical anisotropy distribution along the normal to the sample surface was studied at different state conditions, depending on its treatment. It was found that presence of a surface layer in the crystal, with physical properties differing from those in the bulk, gave rise to extended distribution of stresses in the uniform part of the crystal.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119234 |
| citation_txt |
Effect of surface condition on strain in semiconductor crystal sample / B.K. Serdega, E.V. Nikitenko, V.I. Prikhodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 9-11. — Бібліогр.: 6 назв. — англ. |
| work_keys_str_mv |
AT serdegabk effectofsurfaceconditiononstraininsemiconductorcrystalsample AT nikitenkoev effectofsurfaceconditiononstraininsemiconductorcrystalsample AT prikhodenkovi effectofsurfaceconditiononstraininsemiconductorcrystalsample |
| first_indexed |
2025-12-07T18:33:46Z |
| last_indexed |
2025-12-07T18:33:46Z |
| _version_ |
1850875499448893440 |