Effect of surface condition on strain in semiconductor crystal sample
Using the optical-polarization technique with polarization modulation, we measured stresses due to surface tension in a single-crystalline silicon sample. Optical anisotropy distribution along the normal to the sample surface was studied at different state conditions, depending on its treatment. It...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2001 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119234 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of surface condition on strain in semiconductor crystal sample / B.K. Serdega, E.V. Nikitenko, V.I. Prikhodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 9-11. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862722059842355200 |
|---|---|
| author | Serdega, B.K. Nikitenko, E.V. Prikhodenko, V.I. |
| author_facet | Serdega, B.K. Nikitenko, E.V. Prikhodenko, V.I. |
| citation_txt | Effect of surface condition on strain in semiconductor crystal sample / B.K. Serdega, E.V. Nikitenko, V.I. Prikhodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 9-11. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Using the optical-polarization technique with polarization modulation, we measured stresses due to surface tension in a single-crystalline silicon sample. Optical anisotropy distribution along the normal to the sample surface was studied at different state conditions, depending on its treatment. It was found that presence of a surface layer in the crystal, with physical properties differing from those in the bulk, gave rise to extended distribution of stresses in the uniform part of the crystal.
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| first_indexed | 2025-12-07T18:33:46Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119234 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:33:46Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Serdega, B.K. Nikitenko, E.V. Prikhodenko, V.I. 2017-06-05T14:47:58Z 2017-06-05T14:47:58Z 2001 Effect of surface condition on strain in semiconductor crystal sample / B.K. Serdega, E.V. Nikitenko, V.I. Prikhodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 9-11. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 78.20.C https://nasplib.isofts.kiev.ua/handle/123456789/119234 Using the optical-polarization technique with polarization modulation, we measured stresses due to surface tension in a single-crystalline silicon sample. Optical anisotropy distribution along the normal to the sample surface was studied at different state conditions, depending on its treatment. It was found that presence of a surface layer in the crystal, with physical properties differing from those in the bulk, gave rise to extended distribution of stresses in the uniform part of the crystal. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of surface condition on strain in semiconductor crystal sample Article published earlier |
| spellingShingle | Effect of surface condition on strain in semiconductor crystal sample Serdega, B.K. Nikitenko, E.V. Prikhodenko, V.I. |
| title | Effect of surface condition on strain in semiconductor crystal sample |
| title_full | Effect of surface condition on strain in semiconductor crystal sample |
| title_fullStr | Effect of surface condition on strain in semiconductor crystal sample |
| title_full_unstemmed | Effect of surface condition on strain in semiconductor crystal sample |
| title_short | Effect of surface condition on strain in semiconductor crystal sample |
| title_sort | effect of surface condition on strain in semiconductor crystal sample |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119234 |
| work_keys_str_mv | AT serdegabk effectofsurfaceconditiononstraininsemiconductorcrystalsample AT nikitenkoev effectofsurfaceconditiononstraininsemiconductorcrystalsample AT prikhodenkovi effectofsurfaceconditiononstraininsemiconductorcrystalsample |