Effect of surface condition on strain in semiconductor crystal sample

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2001
• Main Authors: Serdega, B.K., Nikitenko, E.V., Prikhodenko, V.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119234
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Effect of surface condition on strain in semiconductor crystal sample / B.K. Serdega, E.V. Nikitenko, V.I. Prikhodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 9-11. — Бібліогр.: 6 назв. — англ.

Using the optical-polarization technique with polarization modulation, we measured stresses due to surface tension in a single-crystalline silicon sample. Optical anisotropy distribution along the normal to the sample surface was studied at different state conditions, depending on its treatment. It...