Electronic properties of silicon surface at different oxide film conditions

• Datum: 2001
• Hauptverfasser: Kirillova, S.I., Primachenko, V.E., Venger, E.F., Chernobai, V.A.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Schriftenreihe: Semiconductor Physics Quantum Electronics & Optoelectronics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119235
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Electronic properties of silicon surface at different oxide film conditions / S.I. Kirillova, V.E. Primachenko, E.F. Venger, V.A. Chernobai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 12-18. — Бібліогр.: 29 назв. — англ.

We used measurements of temperature and electric field dependencies of surface photovoltage to study electronic properties of (100) n-silicon surface after its thermal and chemical oxidation, as well as after oxide films removal in HF. Measurements of surface photovoltage vs temperature curves revea...