Electronic properties of silicon surface at different oxide film conditions
We used measurements of temperature and electric field dependencies of surface photovoltage to study electronic properties of (100) n-silicon surface after its thermal and chemical oxidation, as well as after oxide films removal in HF. Measurements of surface photovoltage vs temperature curves revea...
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| Date: | 2001 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119235 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electronic properties of silicon surface at different oxide film conditions / S.I. Kirillova, V.E. Primachenko, E.F. Venger, V.A. Chernobai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 12-18. — Бібліогр.: 29 назв. — англ. |