Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films

π-A - diagrams, ellipsometry and contact potential difference measurements were used to study the preparation and surface potential of calixarenes LBFs modified with phosphorylated groups at upper molecular rim (see text). The Langmuir nature of the obtained films on the silicon substrates has been...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2001
Автори: Nesterenko, B.O., Kazantseva, Z.I., Stadnyk, O.A., De Rossi, D., Kalchenko, V.I.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/119236
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films / B.O. Nesterenko, Z.I. Kazantseva, O.A. Stadnyk, D. De Rossi, V.I. Kalchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 29-33. — Бібліогр.: 10 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-119236
record_format dspace
spelling Nesterenko, B.O.
Kazantseva, Z.I.
Stadnyk, O.A.
De Rossi, D.
Kalchenko, V.I.
2017-06-05T15:55:30Z
2017-06-05T15:55:30Z
2001
Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films / B.O. Nesterenko, Z.I. Kazantseva, O.A. Stadnyk, D. De Rossi, V.I. Kalchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 29-33. — Бібліогр.: 10 назв. — англ.
1560-8034
PACS: 68.18, 81.15.L
https://nasplib.isofts.kiev.ua/handle/123456789/119236
π-A - diagrams, ellipsometry and contact potential difference measurements were used to study the preparation and surface potential of calixarenes LBFs modified with phosphorylated groups at upper molecular rim (see text). The Langmuir nature of the obtained films on the silicon substrates has been proved. The surface potentials and molecular concentrations have been measured for all the compounds under investigation. Normal components of the dipole moments were analyzed for observed calixarenes. In monolayered structures they appeared to be positive for the molecules as a whole as well as for their parts.
This work was performed in the framework of grant INTAS-Ukraine N 95-0129 and with its financial assistance. The authors highly appreciate the INTAS support.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films
spellingShingle Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films
Nesterenko, B.O.
Kazantseva, Z.I.
Stadnyk, O.A.
De Rossi, D.
Kalchenko, V.I.
title_short Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films
title_full Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films
title_fullStr Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films
title_full_unstemmed Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films
title_sort dipole properties of the upper rim phosphorylated calix[4]arenes in the langmuir-blodgett films
author Nesterenko, B.O.
Kazantseva, Z.I.
Stadnyk, O.A.
De Rossi, D.
Kalchenko, V.I.
author_facet Nesterenko, B.O.
Kazantseva, Z.I.
Stadnyk, O.A.
De Rossi, D.
Kalchenko, V.I.
publishDate 2001
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description π-A - diagrams, ellipsometry and contact potential difference measurements were used to study the preparation and surface potential of calixarenes LBFs modified with phosphorylated groups at upper molecular rim (see text). The Langmuir nature of the obtained films on the silicon substrates has been proved. The surface potentials and molecular concentrations have been measured for all the compounds under investigation. Normal components of the dipole moments were analyzed for observed calixarenes. In monolayered structures they appeared to be positive for the molecules as a whole as well as for their parts.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/119236
citation_txt Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films / B.O. Nesterenko, Z.I. Kazantseva, O.A. Stadnyk, D. De Rossi, V.I. Kalchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 29-33. — Бібліогр.: 10 назв. — англ.
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AT kazantsevazi dipolepropertiesoftheupperrimphosphorylatedcalix4arenesinthelangmuirblodgettfilms
AT stadnykoa dipolepropertiesoftheupperrimphosphorylatedcalix4arenesinthelangmuirblodgettfilms
AT derossid dipolepropertiesoftheupperrimphosphorylatedcalix4arenesinthelangmuirblodgettfilms
AT kalchenkovi dipolepropertiesoftheupperrimphosphorylatedcalix4arenesinthelangmuirblodgettfilms
first_indexed 2025-12-07T18:53:02Z
last_indexed 2025-12-07T18:53:02Z
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