Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films
π-A - diagrams, ellipsometry and contact potential difference measurements were used to study the preparation and surface potential of calixarenes LBFs modified with phosphorylated groups at upper molecular rim (see text). The Langmuir nature of the obtained films on the silicon substrates has been...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2001 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119236 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films / B.O. Nesterenko, Z.I. Kazantseva, O.A. Stadnyk, D. De Rossi, V.I. Kalchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 29-33. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862725489283563520 |
|---|---|
| author | Nesterenko, B.O. Kazantseva, Z.I. Stadnyk, O.A. De Rossi, D. Kalchenko, V.I. |
| author_facet | Nesterenko, B.O. Kazantseva, Z.I. Stadnyk, O.A. De Rossi, D. Kalchenko, V.I. |
| citation_txt | Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films / B.O. Nesterenko, Z.I. Kazantseva, O.A. Stadnyk, D. De Rossi, V.I. Kalchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 29-33. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | π-A - diagrams, ellipsometry and contact potential difference measurements were used to study the preparation and surface potential of calixarenes LBFs modified with phosphorylated groups at upper molecular rim (see text). The Langmuir nature of the obtained films on the silicon substrates has been proved. The surface potentials and molecular concentrations have been measured for all the compounds under investigation. Normal components of the dipole moments were analyzed for observed calixarenes. In monolayered structures they appeared to be positive for the molecules as a whole as well as for their parts.
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| first_indexed | 2025-12-07T18:53:02Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119236 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:53:02Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Nesterenko, B.O. Kazantseva, Z.I. Stadnyk, O.A. De Rossi, D. Kalchenko, V.I. 2017-06-05T15:55:30Z 2017-06-05T15:55:30Z 2001 Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films / B.O. Nesterenko, Z.I. Kazantseva, O.A. Stadnyk, D. De Rossi, V.I. Kalchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 29-33. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS: 68.18, 81.15.L https://nasplib.isofts.kiev.ua/handle/123456789/119236 π-A - diagrams, ellipsometry and contact potential difference measurements were used to study the preparation and surface potential of calixarenes LBFs modified with phosphorylated groups at upper molecular rim (see text). The Langmuir nature of the obtained films on the silicon substrates has been proved. The surface potentials and molecular concentrations have been measured for all the compounds under investigation. Normal components of the dipole moments were analyzed for observed calixarenes. In monolayered structures they appeared to be positive for the molecules as a whole as well as for their parts. This work was performed in the framework of grant INTAS-Ukraine N 95-0129 and with its financial assistance. The authors highly appreciate the INTAS support. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films Article published earlier |
| spellingShingle | Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films Nesterenko, B.O. Kazantseva, Z.I. Stadnyk, O.A. De Rossi, D. Kalchenko, V.I. |
| title | Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films |
| title_full | Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films |
| title_fullStr | Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films |
| title_full_unstemmed | Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films |
| title_short | Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films |
| title_sort | dipole properties of the upper rim phosphorylated calix[4]arenes in the langmuir-blodgett films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119236 |
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