Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2001
• Hauptverfasser: Nesterenko, B.O., Kazantseva, Z.I., Stadnyk, O.A., De Rossi, D., Kalchenko, V.I.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119236
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films / B.O. Nesterenko, Z.I. Kazantseva, O.A. Stadnyk, D. De Rossi, V.I. Kalchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 29-33. — Бібліогр.: 10 назв. — англ.

π-A - diagrams, ellipsometry and contact potential difference measurements were used to study the preparation and surface potential of calixarenes LBFs modified with phosphorylated groups at upper molecular rim (see text). The Langmuir nature of the obtained films on the silicon substrates has been...