Electrical properties of macroporous silicon structures
The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures of macroporous silicon, and also in a matrix of macroporous layers have a max...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2001 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119238 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrical properties of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 40-43. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862732060778561536 |
|---|---|
| author | Karachevtseva, L.A. Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. |
| author_facet | Karachevtseva, L.A. Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. |
| citation_txt | Electrical properties of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 40-43. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures of macroporous silicon, and also in a matrix of macroporous layers have a maximum for a macropore volume of V = 0.3-0.4. Thus the electron mobility decreases monotonically. The experimental results were explained by a model based on the existence of electron-enriched regions around pores, with thickness ΔD ≈ 1 mm formed after electrochemical and chemical treatment of the macropore walls.
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| first_indexed | 2025-12-07T19:29:23Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119238 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:29:23Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Karachevtseva, L.A. Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. 2017-06-05T15:59:59Z 2017-06-05T15:59:59Z 2001 Electrical properties of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 40-43. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 71.25.Rk, 81.60.Cp https://nasplib.isofts.kiev.ua/handle/123456789/119238 The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures of macroporous silicon, and also in a matrix of macroporous layers have a maximum for a macropore volume of V = 0.3-0.4. Thus the electron mobility decreases monotonically. The experimental results were explained by a model based on the existence of electron-enriched regions around pores, with thickness ΔD ≈ 1 mm formed after electrochemical and chemical treatment of the macropore walls. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electrical properties of macroporous silicon structures Article published earlier |
| spellingShingle | Electrical properties of macroporous silicon structures Karachevtseva, L.A. Lytvynenko, O.A. Malovichko, E.A. Sobolev, V.D. Stronska, O.J. |
| title | Electrical properties of macroporous silicon structures |
| title_full | Electrical properties of macroporous silicon structures |
| title_fullStr | Electrical properties of macroporous silicon structures |
| title_full_unstemmed | Electrical properties of macroporous silicon structures |
| title_short | Electrical properties of macroporous silicon structures |
| title_sort | electrical properties of macroporous silicon structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119238 |
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