Activation of porous Si blue emission due to preanodization ion implantation
Implantation of B⁺, N⁺, and B⁺+N⁺ ions into initial silicon wafers was carried out before anodization process. The results of photoluminescent (PL) study of porous Si samples prepared on B⁺ or N⁺ implanted wafers show a decrease in the photoluminescence intensity when compared with the initial porou...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2001 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119239 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Activation of porous Si blue emission due to preanodization ion implantation / A.G. Rozhin, N.I. Klyui, V.G. Litovchenko, V.P. Melnik, B.N. Romanyuk, Yu.P. Piryatinskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 44-47. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862546028257869824 |
|---|---|
| author | Rozhin, A.G. Klyui, N.I. Litovchenko, V.G. Melnik, V.P. Romanyuk, B.N. Piryatinskii, Yu.P. |
| author_facet | Rozhin, A.G. Klyui, N.I. Litovchenko, V.G. Melnik, V.P. Romanyuk, B.N. Piryatinskii, Yu.P. |
| citation_txt | Activation of porous Si blue emission due to preanodization ion implantation / A.G. Rozhin, N.I. Klyui, V.G. Litovchenko, V.P. Melnik, B.N. Romanyuk, Yu.P. Piryatinskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 44-47. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Implantation of B⁺, N⁺, and B⁺+N⁺ ions into initial silicon wafers was carried out before anodization process. The results of photoluminescent (PL) study of porous Si samples prepared on B⁺ or N⁺ implanted wafers show a decrease in the photoluminescence intensity when compared with the initial porous Si. In contrast to this, the B⁺+ N⁺ double doped samples show the increasing of the photoluminescence intensity. This effect can be explained by donor-acceptor pairs formation, and, as a result, the new recombination-active radiative channel creation. Rapid thermal annealing (RTA) treatment leads to significant decrease of PL intensity in the longwave spectral range for initial sample and samples prepared on implanted substrates. Furthermore, RTA treatments leads to the activation of the porous Si high-energy PL formed on the B⁺ implanted wafers.
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| first_indexed | 2025-11-25T10:04:33Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119239 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T10:04:33Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Rozhin, A.G. Klyui, N.I. Litovchenko, V.G. Melnik, V.P. Romanyuk, B.N. Piryatinskii, Yu.P. 2017-06-05T16:03:05Z 2017-06-05T16:03:05Z 2001 Activation of porous Si blue emission due to preanodization ion implantation / A.G. Rozhin, N.I. Klyui, V.G. Litovchenko, V.P. Melnik, B.N. Romanyuk, Yu.P. Piryatinskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 44-47. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 61.72.T, 78.55.M https://nasplib.isofts.kiev.ua/handle/123456789/119239 Implantation of B⁺, N⁺, and B⁺+N⁺ ions into initial silicon wafers was carried out before anodization process. The results of photoluminescent (PL) study of porous Si samples prepared on B⁺ or N⁺ implanted wafers show a decrease in the photoluminescence intensity when compared with the initial porous Si. In contrast to this, the B⁺+ N⁺ double doped samples show the increasing of the photoluminescence intensity. This effect can be explained by donor-acceptor pairs formation, and, as a result, the new recombination-active radiative channel creation. Rapid thermal annealing (RTA) treatment leads to significant decrease of PL intensity in the longwave spectral range for initial sample and samples prepared on implanted substrates. Furthermore, RTA treatments leads to the activation of the porous Si high-energy PL formed on the B⁺ implanted wafers. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Activation of porous Si blue emission due to preanodization ion implantation Article published earlier |
| spellingShingle | Activation of porous Si blue emission due to preanodization ion implantation Rozhin, A.G. Klyui, N.I. Litovchenko, V.G. Melnik, V.P. Romanyuk, B.N. Piryatinskii, Yu.P. |
| title | Activation of porous Si blue emission due to preanodization ion implantation |
| title_full | Activation of porous Si blue emission due to preanodization ion implantation |
| title_fullStr | Activation of porous Si blue emission due to preanodization ion implantation |
| title_full_unstemmed | Activation of porous Si blue emission due to preanodization ion implantation |
| title_short | Activation of porous Si blue emission due to preanodization ion implantation |
| title_sort | activation of porous si blue emission due to preanodization ion implantation |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119239 |
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