Activation of porous Si blue emission due to preanodization ion implantation

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2001
• Hauptverfasser: Rozhin, A.G., Klyui, N.I., Litovchenko, V.G., Melnik, V.P., Romanyuk, B.N., Piryatinskii, Yu.P.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119239
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Activation of porous Si blue emission due to preanodization ion implantation / A.G. Rozhin, N.I. Klyui, V.G. Litovchenko, V.P. Melnik, B.N. Romanyuk, Yu.P. Piryatinskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 44-47. — Бібліогр.: 16 назв. — англ.

Implantation of B⁺, N⁺, and B⁺+N⁺ ions into initial silicon wafers was carried out before anodization process. The results of photoluminescent (PL) study of porous Si samples prepared on B⁺ or N⁺ implanted wafers show a decrease in the photoluminescence intensity when compared with the initial porou...