Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes
Electroluminescent characteristics and the photodepolarization spectra of ZnS:Mn thin-film electroluminescent devices made with two different atomic-layer epitaxy processes based on chlorine and metalorganic precursors have been studied during initial stage of accelerated aging. Essential difference...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2001 |
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119240 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes / N.A. Vlasenko, Ya.F. Kononets, Z.L. Denisova, Yu.V. Kopytko, L.I. Veligura, El. Soininen, R.O. Tornqvist, K.M. Vasama // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 48-55. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862570889015459840 |
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| author | Vlasenko, N.A. Kononets, Ya.F. Denisova, Z.L. Kopytko, Yu.V. Veligura, L.I. Soininen, El. Tornqvist, R.O. Vasama, K.M. |
| author_facet | Vlasenko, N.A. Kononets, Ya.F. Denisova, Z.L. Kopytko, Yu.V. Veligura, L.I. Soininen, El. Tornqvist, R.O. Vasama, K.M. |
| citation_txt | Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes / N.A. Vlasenko, Ya.F. Kononets, Z.L. Denisova, Yu.V. Kopytko, L.I. Veligura, El. Soininen, R.O. Tornqvist, K.M. Vasama // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 48-55. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Electroluminescent characteristics and the photodepolarization spectra of ZnS:Mn thin-film electroluminescent devices made with two different atomic-layer epitaxy processes based on chlorine and metalorganic precursors have been studied during initial stage of accelerated aging. Essential differences have been revealed. They are explained in assumption that different impurity centers exist in the ZnS:Mn films grown by using chlorine and metalorganic precursors, namely, MnCl₂, Cli⁻, Cls⁺ and isovalent oxygen traps, respectively. The mechanism of aging in both types of devices is discussed.
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| first_indexed | 2025-11-26T03:01:22Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119240 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T03:01:22Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vlasenko, N.A. Kononets, Ya.F. Denisova, Z.L. Kopytko, Yu.V. Veligura, L.I. Soininen, El. Tornqvist, R.O. Vasama, K.M. 2017-06-05T16:10:16Z 2017-06-05T16:10:16Z 2001 Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes / N.A. Vlasenko, Ya.F. Kononets, Z.L. Denisova, Yu.V. Kopytko, L.I. Veligura, El. Soininen, R.O. Tornqvist, K.M. Vasama // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 48-55. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 78.60.Fi, 78.66.Hf, 71.55.Gs https://nasplib.isofts.kiev.ua/handle/123456789/119240 Electroluminescent characteristics and the photodepolarization spectra of ZnS:Mn thin-film electroluminescent devices made with two different atomic-layer epitaxy processes based on chlorine and metalorganic precursors have been studied during initial stage of accelerated aging. Essential differences have been revealed. They are explained in assumption that different impurity centers exist in the ZnS:Mn films grown by using chlorine and metalorganic precursors, namely, MnCl₂, Cli⁻, Cls⁺ and isovalent oxygen traps, respectively. The mechanism of aging in both types of devices is discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes Article published earlier |
| spellingShingle | Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes Vlasenko, N.A. Kononets, Ya.F. Denisova, Z.L. Kopytko, Yu.V. Veligura, L.I. Soininen, El. Tornqvist, R.O. Vasama, K.M. |
| title | Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes |
| title_full | Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes |
| title_fullStr | Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes |
| title_full_unstemmed | Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes |
| title_short | Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes |
| title_sort | aging of zns:mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119240 |
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