Structural investigations of annealed ZnS:Cu, Ga film phosphors
X-ray and atomic force microscopy techniques were used for investigations of crystalline structure and nano-morphology of ZnS:Cu thin films. The films were deposited by electron beam evaporation on substrates of various types (glass, BaTiO₃, silicon). New non-vacuum method of annealing was applied f...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2001 |
| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119243 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Structural investigations of annealed ZnS:Cu, Ga film phosphors / O.S. Lytvyn, V.S. Khomchenko, T.G. Kryshtab, P.M. Lytvyn, M.O. Mazin, I.V. Prokopenko, V.Ye. Rodionov, Yu.A. Tzyrkunov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 19-23. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862632368261562368 |
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| author | Lytvyn, O.S. Khomchenko, V.S. Kryshtab, T.G. Lytvyn, P.M. Mazin, M.O. Prokopenko, I.V. Rodionov, V.Ye. Tzyrkunov, Yu.A. |
| author_facet | Lytvyn, O.S. Khomchenko, V.S. Kryshtab, T.G. Lytvyn, P.M. Mazin, M.O. Prokopenko, I.V. Rodionov, V.Ye. Tzyrkunov, Yu.A. |
| citation_txt | Structural investigations of annealed ZnS:Cu, Ga film phosphors / O.S. Lytvyn, V.S. Khomchenko, T.G. Kryshtab, P.M. Lytvyn, M.O. Mazin, I.V. Prokopenko, V.Ye. Rodionov, Yu.A. Tzyrkunov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 19-23. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | X-ray and atomic force microscopy techniques were used for investigations of crystalline structure and nano-morphology of ZnS:Cu thin films. The films were deposited by electron beam evaporation on substrates of various types (glass, BaTiO₃, silicon). New non-vacuum method of annealing was applied for improvement electro-physical parameters of ZnS:Cu based thin film electroluminescent devices. The annealing was carried out at the temperature of 850 °C. Ga co-doping was applied for the same structures in the course of the annealing process. It was shown that recrystallization process at annealing leads to improvement of ZnS:Cu films structural perfection without changes of crystal structure. This improvement provides tenfold increase of photo- and electroluminescence brightness and decrease of threshold voltage down to 10 V, as well as enhancement of device stability against degradation.
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| first_indexed | 2025-11-30T12:47:17Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-119243 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T12:47:17Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Lytvyn, O.S. Khomchenko, V.S. Kryshtab, T.G. Lytvyn, P.M. Mazin, M.O. Prokopenko, I.V. Rodionov, V.Ye. Tzyrkunov, Yu.A. 2017-06-05T16:15:25Z 2017-06-05T16:15:25Z 2001 Structural investigations of annealed ZnS:Cu, Ga film phosphors / O.S. Lytvyn, V.S. Khomchenko, T.G. Kryshtab, P.M. Lytvyn, M.O. Mazin, I.V. Prokopenko, V.Ye. Rodionov, Yu.A. Tzyrkunov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 19-23. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 61.10.H, 61.16.C, 78.55, 78.60.F https://nasplib.isofts.kiev.ua/handle/123456789/119243 X-ray and atomic force microscopy techniques were used for investigations of crystalline structure and nano-morphology of ZnS:Cu thin films. The films were deposited by electron beam evaporation on substrates of various types (glass, BaTiO₃, silicon). New non-vacuum method of annealing was applied for improvement electro-physical parameters of ZnS:Cu based thin film electroluminescent devices. The annealing was carried out at the temperature of 850 °C. Ga co-doping was applied for the same structures in the course of the annealing process. It was shown that recrystallization process at annealing leads to improvement of ZnS:Cu films structural perfection without changes of crystal structure. This improvement provides tenfold increase of photo- and electroluminescence brightness and decrease of threshold voltage down to 10 V, as well as enhancement of device stability against degradation. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Structural investigations of annealed ZnS:Cu, Ga film phosphors Article published earlier |
| spellingShingle | Structural investigations of annealed ZnS:Cu, Ga film phosphors Lytvyn, O.S. Khomchenko, V.S. Kryshtab, T.G. Lytvyn, P.M. Mazin, M.O. Prokopenko, I.V. Rodionov, V.Ye. Tzyrkunov, Yu.A. |
| title | Structural investigations of annealed ZnS:Cu, Ga film phosphors |
| title_full | Structural investigations of annealed ZnS:Cu, Ga film phosphors |
| title_fullStr | Structural investigations of annealed ZnS:Cu, Ga film phosphors |
| title_full_unstemmed | Structural investigations of annealed ZnS:Cu, Ga film phosphors |
| title_short | Structural investigations of annealed ZnS:Cu, Ga film phosphors |
| title_sort | structural investigations of annealed zns:cu, ga film phosphors |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119243 |
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