Structural investigations of annealed ZnS:Cu, Ga film phosphors

Structural investigations of annealed ZnS:Cu, Ga film phosphors

X-ray and atomic force microscopy techniques were used for investigations of crystalline structure and nano-morphology of ZnS:Cu thin films. The films were deposited by electron beam evaporation on substrates of various types (glass, BaTiO₃, silicon). New non-vacuum method of annealing was applied f...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2001
Hauptverfasser: Lytvyn, O.S., Khomchenko, V.S., Kryshtab, T.G., Lytvyn, P.M., Mazin, M.O., Prokopenko, I.V., Rodionov, V.Ye., Tzyrkunov, Yu.A.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119243
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Structural investigations of annealed ZnS:Cu, Ga film phosphors / O.S. Lytvyn, V.S. Khomchenko, T.G. Kryshtab, P.M. Lytvyn, M.O. Mazin, I.V. Prokopenko, V.Ye. Rodionov, Yu.A. Tzyrkunov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 19-23. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-119243
record_format dspace
spelling Lytvyn, O.S.
Khomchenko, V.S.
Kryshtab, T.G.
Lytvyn, P.M.
Mazin, M.O.
Prokopenko, I.V.
Rodionov, V.Ye.
Tzyrkunov, Yu.A.
2017-06-05T16:15:25Z
2017-06-05T16:15:25Z
2001
Structural investigations of annealed ZnS:Cu, Ga film phosphors / O.S. Lytvyn, V.S. Khomchenko, T.G. Kryshtab, P.M. Lytvyn, M.O. Mazin, I.V. Prokopenko, V.Ye. Rodionov, Yu.A. Tzyrkunov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 19-23. — Бібліогр.: 13 назв. — англ.
1560-8034
PACS: 61.10.H, 61.16.C, 78.55, 78.60.F
https://nasplib.isofts.kiev.ua/handle/123456789/119243
X-ray and atomic force microscopy techniques were used for investigations of crystalline structure and nano-morphology of ZnS:Cu thin films. The films were deposited by electron beam evaporation on substrates of various types (glass, BaTiO₃, silicon). New non-vacuum method of annealing was applied for improvement electro-physical parameters of ZnS:Cu based thin film electroluminescent devices. The annealing was carried out at the temperature of 850 °C. Ga co-doping was applied for the same structures in the course of the annealing process. It was shown that recrystallization process at annealing leads to improvement of ZnS:Cu films structural perfection without changes of crystal structure. This improvement provides tenfold increase of photo- and electroluminescence brightness and decrease of threshold voltage down to 10 V, as well as enhancement of device stability against degradation.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Structural investigations of annealed ZnS:Cu, Ga film phosphors
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Structural investigations of annealed ZnS:Cu, Ga film phosphors
spellingShingle Structural investigations of annealed ZnS:Cu, Ga film phosphors
Lytvyn, O.S.
Khomchenko, V.S.
Kryshtab, T.G.
Lytvyn, P.M.
Mazin, M.O.
Prokopenko, I.V.
Rodionov, V.Ye.
Tzyrkunov, Yu.A.
title_short Structural investigations of annealed ZnS:Cu, Ga film phosphors
title_full Structural investigations of annealed ZnS:Cu, Ga film phosphors
title_fullStr Structural investigations of annealed ZnS:Cu, Ga film phosphors
title_full_unstemmed Structural investigations of annealed ZnS:Cu, Ga film phosphors
title_sort structural investigations of annealed zns:cu, ga film phosphors
author Lytvyn, O.S.
Khomchenko, V.S.
Kryshtab, T.G.
Lytvyn, P.M.
Mazin, M.O.
Prokopenko, I.V.
Rodionov, V.Ye.
Tzyrkunov, Yu.A.
author_facet Lytvyn, O.S.
Khomchenko, V.S.
Kryshtab, T.G.
Lytvyn, P.M.
Mazin, M.O.
Prokopenko, I.V.
Rodionov, V.Ye.
Tzyrkunov, Yu.A.
publishDate 2001
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description X-ray and atomic force microscopy techniques were used for investigations of crystalline structure and nano-morphology of ZnS:Cu thin films. The films were deposited by electron beam evaporation on substrates of various types (glass, BaTiO₃, silicon). New non-vacuum method of annealing was applied for improvement electro-physical parameters of ZnS:Cu based thin film electroluminescent devices. The annealing was carried out at the temperature of 850 °C. Ga co-doping was applied for the same structures in the course of the annealing process. It was shown that recrystallization process at annealing leads to improvement of ZnS:Cu films structural perfection without changes of crystal structure. This improvement provides tenfold increase of photo- and electroluminescence brightness and decrease of threshold voltage down to 10 V, as well as enhancement of device stability against degradation.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/119243
citation_txt Structural investigations of annealed ZnS:Cu, Ga film phosphors / O.S. Lytvyn, V.S. Khomchenko, T.G. Kryshtab, P.M. Lytvyn, M.O. Mazin, I.V. Prokopenko, V.Ye. Rodionov, Yu.A. Tzyrkunov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 19-23. — Бібліогр.: 13 назв. — англ.
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first_indexed 2025-11-30T12:47:17Z
last_indexed 2025-11-30T12:47:17Z
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