Features of electrical charge transfer in porous silicon

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2001
• Main Author: Monastyrskii, L.S.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119244
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Features of electrical charge transfer in porous silicon / L.S. Monastyrskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 24-28. — Бібліогр.: 5 назв. — англ.

The thermostimulated depolarization (TSD) spectra of porous silicon (PS) in the range of temperatures 77 - 450 K were investigated. Several wide bands of TSD current with different values referred to different types of PS charged defects were discovered. Comparative investigation of TSD spectra of P...