Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs
Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO₂ interface is responsible for the hysteresis of transistor drain characteristics in the prekink region. Thermally activated emptying of these traps leads to the sharp...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2001 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119246 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs / V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 75-81. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO₂ interface is responsible for the hysteresis of transistor drain characteristics in the prekink region. Thermally activated emptying of these traps leads to the sharp decrease of the current in the subthreshold mode of transistor operation
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| ISSN: | 1560-8034 |