Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs
Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO₂ interface is responsible for the hysteresis of transistor drain characteristics in the prekink region. Thermally activated emptying of these traps leads to the sharp...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2001 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119246 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs / V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 75-81. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862713020161982464 |
|---|---|
| author | Lysenko, V.S. Tyagulski, I.P. Gomeniuk, Y.V. Osiyuk, I.N. |
| author_facet | Lysenko, V.S. Tyagulski, I.P. Gomeniuk, Y.V. Osiyuk, I.N. |
| citation_txt | Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs / V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 75-81. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO₂ interface is responsible for the hysteresis of transistor drain characteristics in the prekink region. Thermally activated emptying of these traps leads to the sharp decrease of the current in the subthreshold mode of transistor operation
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| first_indexed | 2025-12-07T17:41:23Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119246 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:41:23Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Lysenko, V.S. Tyagulski, I.P. Gomeniuk, Y.V. Osiyuk, I.N. 2017-06-05T16:19:41Z 2017-06-05T16:19:41Z 2001 Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs / V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 75-81. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 68.35, 72.20.J, 73.20, 73.40,85.30.T https://nasplib.isofts.kiev.ua/handle/123456789/119246 Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO₂ interface is responsible for the hysteresis of transistor drain characteristics in the prekink region. Thermally activated emptying of these traps leads to the sharp decrease of the current in the subthreshold mode of transistor operation en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs Article published earlier |
| spellingShingle | Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs Lysenko, V.S. Tyagulski, I.P. Gomeniuk, Y.V. Osiyuk, I.N. |
| title | Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs |
| title_full | Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs |
| title_fullStr | Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs |
| title_full_unstemmed | Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs |
| title_short | Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs |
| title_sort | effect of oxide-semiconductor interface traps on low-temperature operation of mosfets |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119246 |
| work_keys_str_mv | AT lysenkovs effectofoxidesemiconductorinterfacetrapsonlowtemperatureoperationofmosfets AT tyagulskiip effectofoxidesemiconductorinterfacetrapsonlowtemperatureoperationofmosfets AT gomeniukyv effectofoxidesemiconductorinterfacetrapsonlowtemperatureoperationofmosfets AT osiyukin effectofoxidesemiconductorinterfacetrapsonlowtemperatureoperationofmosfets |