Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs

Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO₂ interface is responsible for the hysteresis of transistor drain characteristics in the prekink region. Thermally activated emptying of these traps leads to the sharp...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2001
Main Authors: Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/119246
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs / V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 75-81. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Lysenko, V.S.
Tyagulski, I.P.
Gomeniuk, Y.V.
Osiyuk, I.N.
author_facet Lysenko, V.S.
Tyagulski, I.P.
Gomeniuk, Y.V.
Osiyuk, I.N.
citation_txt Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs / V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 75-81. — Бібліогр.: 15 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO₂ interface is responsible for the hysteresis of transistor drain characteristics in the prekink region. Thermally activated emptying of these traps leads to the sharp decrease of the current in the subthreshold mode of transistor operation
first_indexed 2025-12-07T17:41:23Z
format Article
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id nasplib_isofts_kiev_ua-123456789-119246
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T17:41:23Z
publishDate 2001
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Lysenko, V.S.
Tyagulski, I.P.
Gomeniuk, Y.V.
Osiyuk, I.N.
2017-06-05T16:19:41Z
2017-06-05T16:19:41Z
2001
Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs / V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 75-81. — Бібліогр.: 15 назв. — англ.
1560-8034
PACS: 68.35, 72.20.J, 73.20, 73.40,85.30.T
https://nasplib.isofts.kiev.ua/handle/123456789/119246
Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO₂ interface is responsible for the hysteresis of transistor drain characteristics in the prekink region. Thermally activated emptying of these traps leads to the sharp decrease of the current in the subthreshold mode of transistor operation
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs
Article
published earlier
spellingShingle Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs
Lysenko, V.S.
Tyagulski, I.P.
Gomeniuk, Y.V.
Osiyuk, I.N.
title Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs
title_full Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs
title_fullStr Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs
title_full_unstemmed Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs
title_short Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs
title_sort effect of oxide-semiconductor interface traps on low-temperature operation of mosfets
url https://nasplib.isofts.kiev.ua/handle/123456789/119246
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AT tyagulskiip effectofoxidesemiconductorinterfacetrapsonlowtemperatureoperationofmosfets
AT gomeniukyv effectofoxidesemiconductorinterfacetrapsonlowtemperatureoperationofmosfets
AT osiyukin effectofoxidesemiconductorinterfacetrapsonlowtemperatureoperationofmosfets