Increase of planar homogeneity of multi-silicon structures by gettering treatments
Two types of gettering treatments are considered and compared from the viewpoint of their usefulness to decrease LD scatter over the wafer in multi-silicon photovoltaic structures. It was found that in both cases high degree of homogeneity in LD distribution over the sample surface and cleaning of t...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2001 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119249 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Increase of planar homogeneity of multi-silicon structures by gettering treatments / V.G. Litovchenko, A.A. Efremov, A.A. Evtukh, Yu.V. Rassamakin, M.I. Klyui, V.P. Kostylov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 82-84. — Бібліогр.: 1 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862639874257977344 |
|---|---|
| author | Litovchenko, V.G. Efremov, A.A. Evtukh, A.A. Rassamakin, Yu.V. Klyui, M.I. Kostylov, V.P. |
| author_facet | Litovchenko, V.G. Efremov, A.A. Evtukh, A.A. Rassamakin, Yu.V. Klyui, M.I. Kostylov, V.P. |
| citation_txt | Increase of planar homogeneity of multi-silicon structures by gettering treatments / V.G. Litovchenko, A.A. Efremov, A.A. Evtukh, Yu.V. Rassamakin, M.I. Klyui, V.P. Kostylov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 82-84. — Бібліогр.: 1 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Two types of gettering treatments are considered and compared from the viewpoint of their usefulness to decrease LD scatter over the wafer in multi-silicon photovoltaic structures. It was found that in both cases high degree of homogeneity in LD distribution over the sample surface and cleaning of the samples from recombination active impurities are achieved. Possible mechanisms of the homogenization are briefly discussed.
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| first_indexed | 2025-12-01T02:10:49Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119249 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T02:10:49Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Litovchenko, V.G. Efremov, A.A. Evtukh, A.A. Rassamakin, Yu.V. Klyui, M.I. Kostylov, V.P. 2017-06-05T16:33:47Z 2017-06-05T16:33:47Z 2001 Increase of planar homogeneity of multi-silicon structures by gettering treatments / V.G. Litovchenko, A.A. Efremov, A.A. Evtukh, Yu.V. Rassamakin, M.I. Klyui, V.P. Kostylov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 82-84. — Бібліогр.: 1 назв. — англ. 1560-8034 PACS: 61.72.Y; 72.40; 81.05.C; 81.65.T https://nasplib.isofts.kiev.ua/handle/123456789/119249 Two types of gettering treatments are considered and compared from the viewpoint of their usefulness to decrease LD scatter over the wafer in multi-silicon photovoltaic structures. It was found that in both cases high degree of homogeneity in LD distribution over the sample surface and cleaning of the samples from recombination active impurities are achieved. Possible mechanisms of the homogenization are briefly discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Increase of planar homogeneity of multi-silicon structures by gettering treatments Article published earlier |
| spellingShingle | Increase of planar homogeneity of multi-silicon structures by gettering treatments Litovchenko, V.G. Efremov, A.A. Evtukh, A.A. Rassamakin, Yu.V. Klyui, M.I. Kostylov, V.P. |
| title | Increase of planar homogeneity of multi-silicon structures by gettering treatments |
| title_full | Increase of planar homogeneity of multi-silicon structures by gettering treatments |
| title_fullStr | Increase of planar homogeneity of multi-silicon structures by gettering treatments |
| title_full_unstemmed | Increase of planar homogeneity of multi-silicon structures by gettering treatments |
| title_short | Increase of planar homogeneity of multi-silicon structures by gettering treatments |
| title_sort | increase of planar homogeneity of multi-silicon structures by gettering treatments |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119249 |
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