Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide
Radiation hardness of semiconductor detectors based on silicon is, first of all, determined by an introduction rate of point defects and aggregation of defect clusters. So introduction of electrically inactive impurity of oxygen promotes taking a vacancy stream aside from a doping impurity of phosph...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2001 |
| Автори: | , , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119250 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide / P.G. Litovchenko, W. Wahl, A.A. Groza, A.P. Dolgolenko, A.Ya. Karpenko, V.I. Khivrych, O.P. Litovchenko, V.F. Lastovetsky, V.I. Sugakov, V.K. Dubovy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 85-90. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862715062757621760 |
|---|---|
| author | Litovchenko, P.G. Wahl, W. Groza, A.A. Dolgolenko, A.P. Karpenko, A.Ya. Khivrych, V.I. Litovchenko, O.P. Lastovetsky, V.F. Sugakov1, V.I. Dubovy, V.K. |
| author_facet | Litovchenko, P.G. Wahl, W. Groza, A.A. Dolgolenko, A.P. Karpenko, A.Ya. Khivrych, V.I. Litovchenko, O.P. Lastovetsky, V.F. Sugakov1, V.I. Dubovy, V.K. |
| citation_txt | Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide / P.G. Litovchenko, W. Wahl, A.A. Groza, A.P. Dolgolenko, A.Ya. Karpenko, V.I. Khivrych, O.P. Litovchenko, V.F. Lastovetsky, V.I. Sugakov, V.K. Dubovy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 85-90. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Radiation hardness of semiconductor detectors based on silicon is, first of all, determined by an introduction rate of point defects and aggregation of defect clusters. So introduction of electrically inactive impurity of oxygen promotes taking a vacancy stream aside from a doping impurity of phosphorus. Thus, in spite of the greater capture radius of vacancies by phosphorus atoms, high concentration of oxygen will suppress formation of E-centres. Use of neutron transmutation doping method allows to receive silicon with enhanced radiation hardness. The preliminary irradiation with neutrons or charged particles with subsequent annealing also allows to increase radiation hardness of material. It is due to introduction into the volume of material some additional sinks for primary radiation defects that causes enhanced radiation hardness of such material.
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| first_indexed | 2025-12-07T17:56:03Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119250 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:56:03Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Litovchenko, P.G. Wahl, W. Groza, A.A. Dolgolenko, A.P. Karpenko, A.Ya. Khivrych, V.I. Litovchenko, O.P. Lastovetsky, V.F. Sugakov1, V.I. Dubovy, V.K. 2017-06-05T16:34:38Z 2017-06-05T16:34:38Z 2001 Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide / P.G. Litovchenko, W. Wahl, A.A. Groza, A.P. Dolgolenko, A.Ya. Karpenko, V.I. Khivrych, O.P. Litovchenko, V.F. Lastovetsky, V.I. Sugakov, V.K. Dubovy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 85-90. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 29.40.W; 61.72; 61.82.F; 71.55.A; 78.66 https://nasplib.isofts.kiev.ua/handle/123456789/119250 Radiation hardness of semiconductor detectors based on silicon is, first of all, determined by an introduction rate of point defects and aggregation of defect clusters. So introduction of electrically inactive impurity of oxygen promotes taking a vacancy stream aside from a doping impurity of phosphorus. Thus, in spite of the greater capture radius of vacancies by phosphorus atoms, high concentration of oxygen will suppress formation of E-centres. Use of neutron transmutation doping method allows to receive silicon with enhanced radiation hardness. The preliminary irradiation with neutrons or charged particles with subsequent annealing also allows to increase radiation hardness of material. It is due to introduction into the volume of material some additional sinks for primary radiation defects that causes enhanced radiation hardness of such material. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide Article published earlier |
| spellingShingle | Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide Litovchenko, P.G. Wahl, W. Groza, A.A. Dolgolenko, A.P. Karpenko, A.Ya. Khivrych, V.I. Litovchenko, O.P. Lastovetsky, V.F. Sugakov1, V.I. Dubovy, V.K. |
| title | Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide |
| title_full | Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide |
| title_fullStr | Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide |
| title_full_unstemmed | Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide |
| title_short | Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide |
| title_sort | influence of preliminary irradiation on radiation hardness of silicon and indium antimonide |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119250 |
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