Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide

Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide

Radiation hardness of semiconductor detectors based on silicon is, first of all, determined by an introduction rate of point defects and aggregation of defect clusters. So introduction of electrically inactive impurity of oxygen promotes taking a vacancy stream aside from a doping impurity of phosph...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2001
Hauptverfasser: Litovchenko, P.G., Wahl, W., Groza, A.A., Dolgolenko, A.P., Karpenko, A.Ya., Khivrych, V.I., Litovchenko, O.P., Lastovetsky, V.F., Sugakov1, V.I., Dubovy, V.K.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119250
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide / P.G. Litovchenko, W. Wahl, A.A. Groza, A.P. Dolgolenko, A.Ya. Karpenko, V.I. Khivrych, O.P. Litovchenko, V.F. Lastovetsky, V.I. Sugakov, V.K. Dubovy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 85-90. — Бібліогр.: 16 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-119250
record_format dspace
spelling Litovchenko, P.G.
Wahl, W.
Groza, A.A.
Dolgolenko, A.P.
Karpenko, A.Ya.
Khivrych, V.I.
Litovchenko, O.P.
Lastovetsky, V.F.
Sugakov1, V.I.
Dubovy, V.K.
2017-06-05T16:34:38Z
2017-06-05T16:34:38Z
2001
Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide / P.G. Litovchenko, W. Wahl, A.A. Groza, A.P. Dolgolenko, A.Ya. Karpenko, V.I. Khivrych, O.P. Litovchenko, V.F. Lastovetsky, V.I. Sugakov, V.K. Dubovy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 85-90. — Бібліогр.: 16 назв. — англ.
1560-8034
PACS: 29.40.W; 61.72; 61.82.F; 71.55.A; 78.66
https://nasplib.isofts.kiev.ua/handle/123456789/119250
Radiation hardness of semiconductor detectors based on silicon is, first of all, determined by an introduction rate of point defects and aggregation of defect clusters. So introduction of electrically inactive impurity of oxygen promotes taking a vacancy stream aside from a doping impurity of phosphorus. Thus, in spite of the greater capture radius of vacancies by phosphorus atoms, high concentration of oxygen will suppress formation of E-centres. Use of neutron transmutation doping method allows to receive silicon with enhanced radiation hardness. The preliminary irradiation with neutrons or charged particles with subsequent annealing also allows to increase radiation hardness of material. It is due to introduction into the volume of material some additional sinks for primary radiation defects that causes enhanced radiation hardness of such material.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide
spellingShingle Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide
Litovchenko, P.G.
Wahl, W.
Groza, A.A.
Dolgolenko, A.P.
Karpenko, A.Ya.
Khivrych, V.I.
Litovchenko, O.P.
Lastovetsky, V.F.
Sugakov1, V.I.
Dubovy, V.K.
title_short Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide
title_full Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide
title_fullStr Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide
title_full_unstemmed Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide
title_sort influence of preliminary irradiation on radiation hardness of silicon and indium antimonide
author Litovchenko, P.G.
Wahl, W.
Groza, A.A.
Dolgolenko, A.P.
Karpenko, A.Ya.
Khivrych, V.I.
Litovchenko, O.P.
Lastovetsky, V.F.
Sugakov1, V.I.
Dubovy, V.K.
author_facet Litovchenko, P.G.
Wahl, W.
Groza, A.A.
Dolgolenko, A.P.
Karpenko, A.Ya.
Khivrych, V.I.
Litovchenko, O.P.
Lastovetsky, V.F.
Sugakov1, V.I.
Dubovy, V.K.
publishDate 2001
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Radiation hardness of semiconductor detectors based on silicon is, first of all, determined by an introduction rate of point defects and aggregation of defect clusters. So introduction of electrically inactive impurity of oxygen promotes taking a vacancy stream aside from a doping impurity of phosphorus. Thus, in spite of the greater capture radius of vacancies by phosphorus atoms, high concentration of oxygen will suppress formation of E-centres. Use of neutron transmutation doping method allows to receive silicon with enhanced radiation hardness. The preliminary irradiation with neutrons or charged particles with subsequent annealing also allows to increase radiation hardness of material. It is due to introduction into the volume of material some additional sinks for primary radiation defects that causes enhanced radiation hardness of such material.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/119250
citation_txt Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide / P.G. Litovchenko, W. Wahl, A.A. Groza, A.P. Dolgolenko, A.Ya. Karpenko, V.I. Khivrych, O.P. Litovchenko, V.F. Lastovetsky, V.I. Sugakov, V.K. Dubovy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 85-90. — Бібліогр.: 16 назв. — англ.
work_keys_str_mv AT litovchenkopg influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide
AT wahlw influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide
AT grozaaa influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide
AT dolgolenkoap influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide
AT karpenkoaya influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide
AT khivrychvi influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide
AT litovchenkoop influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide
AT lastovetskyvf influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide
AT sugakov1vi influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide
AT dubovyvk influenceofpreliminaryirradiationonradiationhardnessofsiliconandindiumantimonide
first_indexed 2025-12-07T17:56:03Z
last_indexed 2025-12-07T17:56:03Z
_version_ 1850873126300155904

Ähnliche Einträge