Short-wave photodetectors based on fine grain-sized poly-Si films
Photoelectric properties of polycrystalline silicon films under illumination were investigated. It was shown that polysilicon films with fine grain sizes may be used as short-wave photodetectors, due to presence of shallow p-n junctions at their grain boundaries.
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2001 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119251 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Short-wave photodetectors based on fine grain-sized poly-Si films / F.G. Agaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 91-92. — Бібліогр.: 5 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862714713824034816 |
|---|---|
| author | Agaev, F.G. |
| author_facet | Agaev, F.G. |
| citation_txt | Short-wave photodetectors based on fine grain-sized poly-Si films / F.G. Agaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 91-92. — Бібліогр.: 5 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Photoelectric properties of polycrystalline silicon films under illumination were investigated. It was shown that polysilicon films with fine grain sizes may be used as short-wave photodetectors, due to presence of shallow p-n junctions at their grain boundaries.
|
| first_indexed | 2025-12-07T17:52:52Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119251 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:52:52Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Agaev, F.G. 2017-06-05T16:35:15Z 2017-06-05T16:35:15Z 2001 Short-wave photodetectors based on fine grain-sized poly-Si films / F.G. Agaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 91-92. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS: 85.60.D https://nasplib.isofts.kiev.ua/handle/123456789/119251 Photoelectric properties of polycrystalline silicon films under illumination were investigated. It was shown that polysilicon films with fine grain sizes may be used as short-wave photodetectors, due to presence of shallow p-n junctions at their grain boundaries. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Short-wave photodetectors based on fine grain-sized poly-Si films Article published earlier |
| spellingShingle | Short-wave photodetectors based on fine grain-sized poly-Si films Agaev, F.G. |
| title | Short-wave photodetectors based on fine grain-sized poly-Si films |
| title_full | Short-wave photodetectors based on fine grain-sized poly-Si films |
| title_fullStr | Short-wave photodetectors based on fine grain-sized poly-Si films |
| title_full_unstemmed | Short-wave photodetectors based on fine grain-sized poly-Si films |
| title_short | Short-wave photodetectors based on fine grain-sized poly-Si films |
| title_sort | short-wave photodetectors based on fine grain-sized poly-si films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119251 |
| work_keys_str_mv | AT agaevfg shortwavephotodetectorsbasedonfinegrainsizedpolysifilms |