Short-wave photodetectors based on fine grain-sized poly-Si films
Photoelectric properties of polycrystalline silicon films under illumination were investigated. It was shown that polysilicon films with fine grain sizes may be used as short-wave photodetectors, due to presence of shallow p-n junctions at their grain boundaries.
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2001 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119251 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Short-wave photodetectors based on fine grain-sized poly-Si films / F.G. Agaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 91-92. — Бібліогр.: 5 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-119251 |
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Agaev, F.G. 2017-06-05T16:35:15Z 2017-06-05T16:35:15Z 2001 Short-wave photodetectors based on fine grain-sized poly-Si films / F.G. Agaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 91-92. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS: 85.60.D https://nasplib.isofts.kiev.ua/handle/123456789/119251 Photoelectric properties of polycrystalline silicon films under illumination were investigated. It was shown that polysilicon films with fine grain sizes may be used as short-wave photodetectors, due to presence of shallow p-n junctions at their grain boundaries. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Short-wave photodetectors based on fine grain-sized poly-Si films Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Short-wave photodetectors based on fine grain-sized poly-Si films |
| spellingShingle |
Short-wave photodetectors based on fine grain-sized poly-Si films Agaev, F.G. |
| title_short |
Short-wave photodetectors based on fine grain-sized poly-Si films |
| title_full |
Short-wave photodetectors based on fine grain-sized poly-Si films |
| title_fullStr |
Short-wave photodetectors based on fine grain-sized poly-Si films |
| title_full_unstemmed |
Short-wave photodetectors based on fine grain-sized poly-Si films |
| title_sort |
short-wave photodetectors based on fine grain-sized poly-si films |
| author |
Agaev, F.G. |
| author_facet |
Agaev, F.G. |
| publishDate |
2001 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Photoelectric properties of polycrystalline silicon films under illumination were investigated. It was shown that polysilicon films with fine grain sizes may be used as short-wave photodetectors, due to presence of shallow p-n junctions at their grain boundaries.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119251 |
| citation_txt |
Short-wave photodetectors based on fine grain-sized poly-Si films / F.G. Agaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 91-92. — Бібліогр.: 5 назв. — англ. |
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AT agaevfg shortwavephotodetectorsbasedonfinegrainsizedpolysifilms |
| first_indexed |
2025-12-07T17:52:52Z |
| last_indexed |
2025-12-07T17:52:52Z |
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