Short-wave photodetectors based on fine grain-sized poly-Si films

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2001
• 1. Verfasser: Agaev, F.G.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119251
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Short-wave photodetectors based on fine grain-sized poly-Si films / F.G. Agaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 91-92. — Бібліогр.: 5 назв. — англ.

Photoelectric properties of polycrystalline silicon films under illumination were investigated. It was shown that polysilicon films with fine grain sizes may be used as short-wave photodetectors, due to presence of shallow p-n junctions at their grain boundaries.