Technology and experimental studies of contacts for microwave diodes based on interstitial phases

Technology and experimental studies of contacts for microwave diodes based on interstitial phases

We consider some aspects of manufacturing technology for films of refractory metals nitrides and borides. These films are used for barrier and ohmic contacts, as well as contacts with antidiffusion layers in gallium arsenide and silicon epitaxial structures that are used to produce microwave diodes....

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2001
Hauptverfasser: Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kurakin, A.M., Milenin, V.V., Soloviev, E.A., Verimeychenko, G.M.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119252
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Technology and experimental studies of contacts for microwave diodes based on interstitial phases / N.S. Boltovets, V.N. Ivanov, R.V. Konakova, A.M. Kurakin, V.V. Milenin, E.A. Soloviev, G.M. Verimeychenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 93-105. — Бібліогр.: 23 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-119252
record_format dspace
spelling Boltovets, N.S.
Ivanov, V.N.
Konakova, R.V.
Kurakin, A.M.
Milenin, V.V.
Soloviev, E.A.
Verimeychenko, G.M.
2017-06-05T16:39:02Z
2017-06-05T16:39:02Z
2001
Technology and experimental studies of contacts for microwave diodes based on interstitial phases / N.S. Boltovets, V.N. Ivanov, R.V. Konakova, A.M. Kurakin, V.V. Milenin, E.A. Soloviev, G.M. Verimeychenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 93-105. — Бібліогр.: 23 назв. — англ.
1560-8034
PACS: 07.07.D, 07.57.H, 81.05.J, 84.40.D
https://nasplib.isofts.kiev.ua/handle/123456789/119252
We consider some aspects of manufacturing technology for films of refractory metals nitrides and borides. These films are used for barrier and ohmic contacts, as well as contacts with antidiffusion layers in gallium arsenide and silicon epitaxial structures that are used to produce microwave diodes. We investigated the properties of sputtered films and metal-semiconductor interfaces, as well as electrophysical parameters of contact structures and IMPATT diodes. The contact structures based on titanium borides and nitrides and zirconium borides are shown to have high thermal stability.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Technology and experimental studies of contacts for microwave diodes based on interstitial phases
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Technology and experimental studies of contacts for microwave diodes based on interstitial phases
spellingShingle Technology and experimental studies of contacts for microwave diodes based on interstitial phases
Boltovets, N.S.
Ivanov, V.N.
Konakova, R.V.
Kurakin, A.M.
Milenin, V.V.
Soloviev, E.A.
Verimeychenko, G.M.
title_short Technology and experimental studies of contacts for microwave diodes based on interstitial phases
title_full Technology and experimental studies of contacts for microwave diodes based on interstitial phases
title_fullStr Technology and experimental studies of contacts for microwave diodes based on interstitial phases
title_full_unstemmed Technology and experimental studies of contacts for microwave diodes based on interstitial phases
title_sort technology and experimental studies of contacts for microwave diodes based on interstitial phases
author Boltovets, N.S.
Ivanov, V.N.
Konakova, R.V.
Kurakin, A.M.
Milenin, V.V.
Soloviev, E.A.
Verimeychenko, G.M.
author_facet Boltovets, N.S.
Ivanov, V.N.
Konakova, R.V.
Kurakin, A.M.
Milenin, V.V.
Soloviev, E.A.
Verimeychenko, G.M.
publishDate 2001
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description We consider some aspects of manufacturing technology for films of refractory metals nitrides and borides. These films are used for barrier and ohmic contacts, as well as contacts with antidiffusion layers in gallium arsenide and silicon epitaxial structures that are used to produce microwave diodes. We investigated the properties of sputtered films and metal-semiconductor interfaces, as well as electrophysical parameters of contact structures and IMPATT diodes. The contact structures based on titanium borides and nitrides and zirconium borides are shown to have high thermal stability.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/119252
citation_txt Technology and experimental studies of contacts for microwave diodes based on interstitial phases / N.S. Boltovets, V.N. Ivanov, R.V. Konakova, A.M. Kurakin, V.V. Milenin, E.A. Soloviev, G.M. Verimeychenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 93-105. — Бібліогр.: 23 назв. — англ.
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first_indexed 2025-12-07T19:38:24Z
last_indexed 2025-12-07T19:38:24Z
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