Technology and experimental studies of contacts for microwave diodes based on interstitial phases
We consider some aspects of manufacturing technology for films of refractory metals nitrides and borides. These films are used for barrier and ohmic contacts, as well as contacts with antidiffusion layers in gallium arsenide and silicon epitaxial structures that are used to produce microwave diodes....
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2001 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119252 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Technology and experimental studies of contacts for microwave diodes based on interstitial phases / N.S. Boltovets, V.N. Ivanov, R.V. Konakova, A.M. Kurakin, V.V. Milenin, E.A. Soloviev, G.M. Verimeychenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 93-105. — Бібліогр.: 23 назв. — англ. |