Buchumschlag

Technology and experimental studies of contacts for microwave diodes based on interstitial phases

We consider some aspects of manufacturing technology for films of refractory metals nitrides and borides. These films are used for barrier and ohmic contacts, as well as contacts with antidiffusion layers in gallium arsenide and silicon epitaxial structures that are used to produce microwave diodes....

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2001
Hauptverfasser:	Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kurakin, A.M., Milenin, V.V., Soloviev, E.A., Verimeychenko, G.M.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/119252
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Technology and experimental studies of contacts for microwave diodes based on interstitial phases / N.S. Boltovets, V.N. Ivanov, R.V. Konakova, A.M. Kurakin, V.V. Milenin, E.A. Soloviev, G.M. Verimeychenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 93-105. — Бібліогр.: 23 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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