X-ray characterization of ZnSe single crystals doped with Mg

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2001
• Hauptverfasser: Fedorov, A.G., Zagoruiko, Yu.A., Fedorenko, O.A., Kovalenko, N.O.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119255
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: X-ray characterization of ZnSe single crystals doped with Mg / A.G. Fedorov, Yu.A. Zagoruiko, O.A. Fedorenko, N.O. Kovalenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 118-122. — Бібліогр.: 4 назв. — англ.

Doping of cubic ZnSe with certain impurities like Mg or Mn during crystal growth causes the increased contents of the hexagonal phase in the crystal or even the transformation to hexagonal wurtzite modification that possess the anisothropy of properties. This opens the possibility to design not only...