Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2001
• Автори: Datsenko, L.I., Klad’ko, V.P., Lytvyn, P.M., Domagala, J., Machulin, V.F., Prokopenko, I.V., Molodkin, V.B., Maksimenko, Z.V.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/119262
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon / L.I. Datsenko, V.P. Klad’ko, P.M. Lytvyn, J. Domagala, V.F. Machulin, I.V. Prokopenko, V.B. Molodkin, Z.V. Maksimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 146-151. — Бібліогр.: 20 назв. — англ.

Complex of X-ray diffractometrical investigations, both angular and spectral dependences of a reflectivity for quasi-forbidden reflections, enable not only to discover structural microdefects and to measure their radii r as well as concentration n, but also to determine the level of nonstoichiometry...