Influence of neutron irradiation on elctrooptical and structural properties of silicon
Processes of structure defects formation, which accompanied by oxygen precipitation after a neutron irradiation (10¹⁵- 10¹⁹ n/cm²) and high-temperature treatment (800 - 1000°С) in CZ silicon, were investigated by the transmission electron microscopy. Influence of the structure defects on electroopti...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2001 |
| Автори: | , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119263 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of neutron irradiation on elctrooptical and structural properties of silicon / A.A. Groza, E.F. Venger, V.I. Varnina, R.Yu. Holiney, P.G. Litovchenko, L.A. Matveeva, A.P. Litovchenko, M.I. Starchik, V.I. Sugakov, G.G. Shmatko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 152-155. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862680130624684032 |
|---|---|
| author | Groza, A.A. Venger, E.F. Varnina, V.I. Holiney, R.Yu. Litovchenko, P.G. Matveeva, L.A. Litovchenko, A.P. Sugakov, V.I. Shmatko, G.G. |
| author_facet | Groza, A.A. Venger, E.F. Varnina, V.I. Holiney, R.Yu. Litovchenko, P.G. Matveeva, L.A. Litovchenko, A.P. Sugakov, V.I. Shmatko, G.G. |
| citation_txt | Influence of neutron irradiation on elctrooptical and structural properties of silicon / A.A. Groza, E.F. Venger, V.I. Varnina, R.Yu. Holiney, P.G. Litovchenko, L.A. Matveeva, A.P. Litovchenko, M.I. Starchik, V.I. Sugakov, G.G. Shmatko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 152-155. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Processes of structure defects formation, which accompanied by oxygen precipitation after a neutron irradiation (10¹⁵- 10¹⁹ n/cm²) and high-temperature treatment (800 - 1000°С) in CZ silicon, were investigated by the transmission electron microscopy. Influence of the structure defects on electrooptical properties of silicon was revealed.
|
| first_indexed | 2025-12-07T15:45:26Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119263 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:45:26Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Groza, A.A. Venger, E.F. Varnina, V.I. Holiney, R.Yu. Litovchenko, P.G. Matveeva, L.A. Litovchenko, A.P. Sugakov, V.I. Shmatko, G.G. 2017-06-05T17:08:01Z 2017-06-05T17:08:01Z 2001 Influence of neutron irradiation on elctrooptical and structural properties of silicon / A.A. Groza, E.F. Venger, V.I. Varnina, R.Yu. Holiney, P.G. Litovchenko, L.A. Matveeva, A.P. Litovchenko, M.I. Starchik, V.I. Sugakov, G.G. Shmatko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 152-155. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 61.82.F https://nasplib.isofts.kiev.ua/handle/123456789/119263 Processes of structure defects formation, which accompanied by oxygen precipitation after a neutron irradiation (10¹⁵- 10¹⁹ n/cm²) and high-temperature treatment (800 - 1000°С) in CZ silicon, were investigated by the transmission electron microscopy. Influence of the structure defects on electrooptical properties of silicon was revealed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of neutron irradiation on elctrooptical and structural properties of silicon Article published earlier |
| spellingShingle | Influence of neutron irradiation on elctrooptical and structural properties of silicon Groza, A.A. Venger, E.F. Varnina, V.I. Holiney, R.Yu. Litovchenko, P.G. Matveeva, L.A. Litovchenko, A.P. Sugakov, V.I. Shmatko, G.G. |
| title | Influence of neutron irradiation on elctrooptical and structural properties of silicon |
| title_full | Influence of neutron irradiation on elctrooptical and structural properties of silicon |
| title_fullStr | Influence of neutron irradiation on elctrooptical and structural properties of silicon |
| title_full_unstemmed | Influence of neutron irradiation on elctrooptical and structural properties of silicon |
| title_short | Influence of neutron irradiation on elctrooptical and structural properties of silicon |
| title_sort | influence of neutron irradiation on elctrooptical and structural properties of silicon |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119263 |
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