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Influence of neutron irradiation on elctrooptical and structural properties of silicon

Processes of structure defects formation, which accompanied by oxygen precipitation after a neutron irradiation (10¹⁵- 10¹⁹ n/cm²) and high-temperature treatment (800 - 1000°С) in CZ silicon, were investigated by the transmission electron microscopy. Influence of the structure defects on electroopti...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2001
Hauptverfasser: Groza, A.A., Venger, E.F., Varnina, V.I., Holiney, R.Yu., Litovchenko, P.G., Matveeva, L.A., Litovchenko, A.P., Sugakov, V.I., Shmatko, G.G.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119263
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Influence of neutron irradiation on elctrooptical and structural properties of silicon / A.A. Groza, E.F. Venger, V.I. Varnina, R.Yu. Holiney, P.G. Litovchenko, L.A. Matveeva, A.P. Litovchenko, M.I. Starchik, V.I. Sugakov, G.G. Shmatko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 152-155. — Бібліогр.: 13 назв. — англ.

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