Influence of structural defects on photoconductivity of zinc diphosphide
Spectral distribution of photoconductivity of initial and gamma-irradiated p-type zinc diphosphide crystals of tetragonal modification has been studied.
 It is supposed that band hn = 1.65 eV responses to clusters of defects existing in initial crystals. Complex defects appearing during high...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2001 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119264 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of structural defects on photoconductivity of zinc diphosphide / A.P. Kudin, V.I. Kuts, P.G. Litovchenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 156-159. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862542591429443584 |
|---|---|
| author | Kudin, A.P. Kuts, V.I. Litovchenko, P.G. Pinkovska, M.B. Tartachnyk, V.P. |
| author_facet | Kudin, A.P. Kuts, V.I. Litovchenko, P.G. Pinkovska, M.B. Tartachnyk, V.P. |
| citation_txt | Influence of structural defects on photoconductivity of zinc diphosphide / A.P. Kudin, V.I. Kuts, P.G. Litovchenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 156-159. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Spectral distribution of photoconductivity of initial and gamma-irradiated p-type zinc diphosphide crystals of tetragonal modification has been studied.
It is supposed that band hn = 1.65 eV responses to clusters of defects existing in initial crystals. Complex defects appearing during high temperature treatment (400oC) form band hn = 1.55-2.14 eV. Irradiation leads to the decrease of dark current and appearing of acceptor type level which can be annealed in the temperature interval 20-100⁰C.
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| first_indexed | 2025-11-24T20:19:33Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-119264 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T20:19:33Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kudin, A.P. Kuts, V.I. Litovchenko, P.G. Pinkovska, M.B. Tartachnyk, V.P. 2017-06-05T17:08:56Z 2017-06-05T17:08:56Z 2001 Influence of structural defects on photoconductivity of zinc diphosphide / A.P. Kudin, V.I. Kuts, P.G. Litovchenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 156-159. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 61.72 https://nasplib.isofts.kiev.ua/handle/123456789/119264 Spectral distribution of photoconductivity of initial and gamma-irradiated p-type zinc diphosphide crystals of tetragonal modification has been studied.
 It is supposed that band hn = 1.65 eV responses to clusters of defects existing in initial crystals. Complex defects appearing during high temperature treatment (400oC) form band hn = 1.55-2.14 eV. Irradiation leads to the decrease of dark current and appearing of acceptor type level which can be annealed in the temperature interval 20-100⁰C. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of structural defects on photoconductivity of zinc diphosphide Article published earlier |
| spellingShingle | Influence of structural defects on photoconductivity of zinc diphosphide Kudin, A.P. Kuts, V.I. Litovchenko, P.G. Pinkovska, M.B. Tartachnyk, V.P. |
| title | Influence of structural defects on photoconductivity of zinc diphosphide |
| title_full | Influence of structural defects on photoconductivity of zinc diphosphide |
| title_fullStr | Influence of structural defects on photoconductivity of zinc diphosphide |
| title_full_unstemmed | Influence of structural defects on photoconductivity of zinc diphosphide |
| title_short | Influence of structural defects on photoconductivity of zinc diphosphide |
| title_sort | influence of structural defects on photoconductivity of zinc diphosphide |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119264 |
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