Influence of structural defects on photoconductivity of zinc diphosphide

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2001
• Hauptverfasser: Kudin, A.P., Kuts, V.I., Litovchenko, P.G., Pinkovska, M.B., Tartachnyk, V.P.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119264
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Influence of structural defects on photoconductivity of zinc diphosphide / A.P. Kudin, V.I. Kuts, P.G. Litovchenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 156-159. — Бібліогр.: 6 назв. — англ.

Spectral distribution of photoconductivity of initial and gamma-irradiated p-type zinc diphosphide crystals of tetragonal modification has been studied. It is supposed that band hn = 1.65 eV responses to clusters of defects existing in initial crystals. Complex defects appearing during high tempera...