Spectral dependence of the photomagnetic effect in porous silicon
Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate of the n-type. The form of the PME spectrum in the long-wave region indica...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2001 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119265 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Spectral dependence of the photomagnetic effect in porous silicon / O.V. Vakulenko, S.V. Kondratenko, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 159-162. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862592439905157120 |
|---|---|
| author | Vakulenko, O.V. Kondratenko, S.V. Serdega, B.K. |
| author_facet | Vakulenko, O.V. Kondratenko, S.V. Serdega, B.K. |
| citation_txt | Spectral dependence of the photomagnetic effect in porous silicon / O.V. Vakulenko, S.V. Kondratenko, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 159-162. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate of the n-type. The form of the PME spectrum in the long-wave region indicates to the drift of the nonequilibrium charge carriers in the c-Si to the PS/c-Si boundary, that is presence of the increased spatial charge layer in c-Si. Relatively high value of the PME in the strong absorption region of the porous silicon indicates to the presence of the PME component caused by porous silicon material.
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| first_indexed | 2025-11-27T08:33:35Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119265 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-27T08:33:35Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vakulenko, O.V. Kondratenko, S.V. Serdega, B.K. 2017-06-05T17:11:07Z 2017-06-05T17:11:07Z 2001 Spectral dependence of the photomagnetic effect in porous silicon / O.V. Vakulenko, S.V. Kondratenko, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 159-162. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 72.40. https://nasplib.isofts.kiev.ua/handle/123456789/119265 Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate of the n-type. The form of the PME spectrum in the long-wave region indicates to the drift of the nonequilibrium charge carriers in the c-Si to the PS/c-Si boundary, that is presence of the increased spatial charge layer in c-Si. Relatively high value of the PME in the strong absorption region of the porous silicon indicates to the presence of the PME component caused by porous silicon material. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Spectral dependence of the photomagnetic effect in porous silicon Article published earlier |
| spellingShingle | Spectral dependence of the photomagnetic effect in porous silicon Vakulenko, O.V. Kondratenko, S.V. Serdega, B.K. |
| title | Spectral dependence of the photomagnetic effect in porous silicon |
| title_full | Spectral dependence of the photomagnetic effect in porous silicon |
| title_fullStr | Spectral dependence of the photomagnetic effect in porous silicon |
| title_full_unstemmed | Spectral dependence of the photomagnetic effect in porous silicon |
| title_short | Spectral dependence of the photomagnetic effect in porous silicon |
| title_sort | spectral dependence of the photomagnetic effect in porous silicon |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119265 |
| work_keys_str_mv | AT vakulenkoov spectraldependenceofthephotomagneticeffectinporoussilicon AT kondratenkosv spectraldependenceofthephotomagneticeffectinporoussilicon AT serdegabk spectraldependenceofthephotomagneticeffectinporoussilicon |