Spectral dependence of the photomagnetic effect in porous silicon

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2001
• Hauptverfasser: Vakulenko, O.V., Kondratenko, S.V., Serdega, B.K.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119265
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Spectral dependence of the photomagnetic effect in porous silicon / O.V. Vakulenko, S.V. Kondratenko, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 159-162. — Бібліогр.: 16 назв. — англ.

Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate of the n-type. The form of the PME spectrum in the long-wave region indica...