About influences of different actions on spectra of impurity photoluminescence in GaAs
Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown that hard data on those changes can be obtained only by a detailed study of lux-...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2001 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119267 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | About influences of different actions on spectra of impurity photoluminescence in GaAs / N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 168-170. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862684871274528768 |
|---|---|
| author | Litovchenko, N.M. Prokhorovich, A.V. Strilchuk, O.N. |
| author_facet | Litovchenko, N.M. Prokhorovich, A.V. Strilchuk, O.N. |
| citation_txt | About influences of different actions on spectra of impurity photoluminescence in GaAs / N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 168-170. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown that hard data on those changes can be obtained only by a detailed study of lux-brightness characteristics of impurity and inter-impurity bands of luminescence. Correlation changes of luminescence intensities of those bands indicate a variation of radiating centers concentration, if their dependence on excitation level in initial crystals and those subjected to external actions are the same.
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| first_indexed | 2025-12-07T15:59:25Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119267 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:59:25Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Litovchenko, N.M. Prokhorovich, A.V. Strilchuk, O.N. 2017-06-05T17:12:42Z 2017-06-05T17:12:42Z 2001 About influences of different actions on spectra of impurity photoluminescence in GaAs / N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 168-170. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 71.55.E, 78.55.E https://nasplib.isofts.kiev.ua/handle/123456789/119267 Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown that hard data on those changes can be obtained only by a detailed study of lux-brightness characteristics of impurity and inter-impurity bands of luminescence. Correlation changes of luminescence intensities of those bands indicate a variation of radiating centers concentration, if their dependence on excitation level in initial crystals and those subjected to external actions are the same. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics About influences of different actions on spectra of impurity photoluminescence in GaAs Article published earlier |
| spellingShingle | About influences of different actions on spectra of impurity photoluminescence in GaAs Litovchenko, N.M. Prokhorovich, A.V. Strilchuk, O.N. |
| title | About influences of different actions on spectra of impurity photoluminescence in GaAs |
| title_full | About influences of different actions on spectra of impurity photoluminescence in GaAs |
| title_fullStr | About influences of different actions on spectra of impurity photoluminescence in GaAs |
| title_full_unstemmed | About influences of different actions on spectra of impurity photoluminescence in GaAs |
| title_short | About influences of different actions on spectra of impurity photoluminescence in GaAs |
| title_sort | about influences of different actions on spectra of impurity photoluminescence in gaas |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119267 |
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