About influences of different actions on spectra of impurity photoluminescence in GaAs
Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown that hard data on those changes can be obtained only by a detailed study of lux-...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2001 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119267 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | About influences of different actions on spectra of impurity photoluminescence in GaAs / N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 168-170. — Бібліогр.: 12 назв. — англ. |