About influences of different actions on spectra of impurity photoluminescence in GaAs

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2001
• Автори: Litovchenko, N.M., Prokhorovich, A.V., Strilchuk, O.N.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/119267
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: About influences of different actions on spectra of impurity photoluminescence in GaAs / N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 168-170. — Бібліогр.: 12 назв. — англ.

Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown that hard data on those changes can be obtained only by a detailed study of lux-...