Features of photoinduced charge transfer in photomagnetic garnets YIG:Si and YIG:Co
Features of charge transfer under influence of linearly polarized light in photomagnetic garnets YIG:Si and YIG:Co are clarified. Comparative analysis of these two gernets is necessary to create a basis for the theoretical model of photoinduced magnetic effects (PME) in garnets and in other material...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2001 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119269 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Features of photoinduced charge transfer in photomagnetic garnets YIG:Si and YIG:Co / I.I. Davidenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 173-176. — Бібліогр.: 15 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Features of charge transfer under influence of linearly polarized light in photomagnetic garnets YIG:Si and YIG:Co are clarified. Comparative analysis of these two gernets is necessary to create a basis for the theoretical model of photoinduced magnetic effects (PME) in garnets and in other materials as well as for explanation of experimental results of PME observation in YIG:Co even at room temperatures. Known experimental results for YIG:Co are adequately explained and described within the scope of developed simplified theoretical model.
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| ISSN: | 1560-8034 |