Characterization of «solar» multicrystalline silicon by local measurements
The features of local measurements of «solar» multicrystalline silicon (mc-Si) parameters are surveyed using examples of grain sizes, diffusion length of minority non-equilibrium charge carriers Ld and effective reflectivity of light R. It is revealed that the crystal grains in mc-Si have 4 groups o...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2001 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119271 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Characterization of «solar» multicrystalline silicon by local measurements/ V.G. Popov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 182-186. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-119271 |
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Popov, V.G. 2017-06-05T17:17:21Z 2017-06-05T17:17:21Z 2001 Characterization of «solar» multicrystalline silicon by local measurements/ V.G. Popov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 182-186. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 84.60.J https://nasplib.isofts.kiev.ua/handle/123456789/119271 The features of local measurements of «solar» multicrystalline silicon (mc-Si) parameters are surveyed using examples of grain sizes, diffusion length of minority non-equilibrium charge carriers Ld and effective reflectivity of light R. It is revealed that the crystal grains in mc-Si have 4 groups of the reference sizes. The errors of the single local measurements of parameters are spotted. It is shown that the values of explored parameters are distributed under the normal law (the Gauss function). The algorithm to obtain the average values of mc-Si parameters with given precision is described. The used experimental procedures for the express non-destructive check of Ld and R in the mc-Si samples are briefly considered. The author would like to thank Prof. В. М. Romanjuk for helpful discussions and valua le remarks. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Characterization of «solar» multicrystalline silicon by local measurements Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Characterization of «solar» multicrystalline silicon by local measurements |
| spellingShingle |
Characterization of «solar» multicrystalline silicon by local measurements Popov, V.G. |
| title_short |
Characterization of «solar» multicrystalline silicon by local measurements |
| title_full |
Characterization of «solar» multicrystalline silicon by local measurements |
| title_fullStr |
Characterization of «solar» multicrystalline silicon by local measurements |
| title_full_unstemmed |
Characterization of «solar» multicrystalline silicon by local measurements |
| title_sort |
characterization of «solar» multicrystalline silicon by local measurements |
| author |
Popov, V.G. |
| author_facet |
Popov, V.G. |
| publishDate |
2001 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The features of local measurements of «solar» multicrystalline silicon (mc-Si) parameters are surveyed using examples of grain sizes, diffusion length of minority non-equilibrium charge carriers Ld and effective reflectivity of light R. It is revealed that the crystal grains in mc-Si have 4 groups of the reference sizes. The errors of the single local measurements of parameters are spotted. It is shown that the values of explored parameters are distributed under the normal law (the Gauss function). The algorithm to obtain the average values of mc-Si parameters with given precision is described. The used experimental procedures for the express non-destructive check of Ld and R in the mc-Si samples are briefly considered.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119271 |
| citation_txt |
Characterization of «solar» multicrystalline silicon by local measurements/ V.G. Popov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 182-186. — Бібліогр.: 9 назв. — англ. |
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AT popovvg characterizationofsolarmulticrystallinesiliconbylocalmeasurements |
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2025-12-07T16:13:44Z |
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2025-12-07T16:13:44Z |
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