Optical investigations of thermostimulated changes in an ensemble of CdSxSe₁₋x quantum dots embedded into borosilicate glass matrix

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2001
• Main Authors: Kunets, V.P., Yukhymchuk, V.O., Valakh, M.Ya.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119274
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Optical investigations of thermostimulated changes in an ensemble of CdSxSe₁₋x quantum dots embedded into borosilicate glass matrix / V.P. Kunets, V.O. Yukhymchuk, M.Ya. Valakh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 196-198. — Бібліогр.: 7 назв. — англ.

We have employed the absorption and Raman spectroscopies to study thermostimulated changes in an ensemble of CdSXSe₁₋X quantum dots embedded into a borosilicate glass matrix. It is shown that additional annealing of the sample containing CdSXSe₁₋X quantum dots leads to growth of the new ones with higher Se content and average radius approximately equal to the previous value. The conclusion was made that the new particles were grown due to diffusion of Cd, S and Se atoms from a glass matrix which was still remained in the oversaturated state, i.e. the recondensation growth stage (so-called “Ostwald ripening” or “diffusion-limited aggregation”) was not achieved during the annealing process. Some parameters of the dots were determined.